Formation of Metal Silicide Nanodots on Ultrathin SiO&lt;sub&gt;2&lt;/sub&gt; for Floating Gate Application

Miyazaki, Seiichi; Ikeda, Mitsuhisa; Makihara, Katsunori; Shimanoe, Kohei; Matsumoto, Ryusaku

doi:10.4028/www.scientific.net/ssp.154.95

Cited by 18 publications

(18 citation statements)

References 8 publications

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“…The formation of Ni-monosilicide nanodots, as a result of the full-silicidation of pre-grown Si-QDs on SiO 2 by remote H 2 plasma exposure after ultrathin Ni film formation, was confirmed from changes in X-ray photoemission core-line and valence band spectra as reported elsewhere [12]. Also, from the cut-off energy for electron emission in high-resolution photoemission measurements, the work function (WF) value of NiSi nanodots was determined to be 4.53± 0.05eV, being close to the WF value of Ni-monosilicide, namely around the energy position of the Si midgap.…”

Section: Resultssupporting

confidence: 74%

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

Miyazaki¹,

Morisama²,

Nakanishi³

et al. 2009

MRS Proc.

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We have proposed and fabricated a hybrid nanodots floating gate (FG), in which Si quantum dots (QDs) as charge injection/emission nodes and NiSi nanodots as charge storage nodes are stacked with an ultrathin SiO 2 interlayer, to satisfy both large memory window and multivalued capability. In this study, Si-QDs with an areal density of ~3x10 11 cm -2 were formed on ultrathin SiO 2 layer by controlling SiH 4 chemical vapor deposition (CVD) and NiSi nanodots were prepared by full-silicidation of Si-QDs promoted with remote H 2 -plasma exposure after Ni evaporation. From capacitance-voltage(C-V) characteristics of MOS capacitors with a NiSi nanodots/Si-QDs hybrid FG, stable storage of many charges in the deep potential well of each NiSi nanodot was confirmed. Also, by applying pulsed gate biases, stepwise charge injection to and emission from NiSi nanodots through discrete energy states in Si-QDs were demonstrated. In addition, by 1310nm (~0.95eV) light irradiation, a distinct optical response in C-V characteristics was detected, which can be interpreted in terms of the shift of charge centroid in the hybrid FG stack due to transfer of photoexcited electrons from NiSi-nanodots to the Si-QDs.

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Section: Resultssupporting

confidence: 74%

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

Miyazaki¹,

Morisama²,

Nakanishi³

et al. 2009

MRS Proc.

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“…In other Fig. 2, which was determined by high-resolution x-ray photoemission measurements [12]. [ 16,17].…”

Section: Resultsmentioning

confidence: 99%

(Invited) Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application

Miyazaki¹,

Ikeda

Makihara³

2013

ECS Trans.

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We have designed and fabricated hybrid nanodots structures, in which Si quantum dots (QDs) and either Ni-silicide or Pt-silicide nanodots (NDs) are stacked with ultrathin SiO 2 interlayer, as a novel functional floating gate (FG) to satisfy both multiple valued capability and large capacity on charge storage. Multiple-step charge injection to silicide NDs through discrete energy states in Si-QDs and stable storage of many charges in deep potential wells in silicide NDs have been confirmed from electrical characteristics of MOS capacitors and transistors measured at room temperature. A unique optical response of the hybrid NDs FG to near-infrared light irradiation, which is caused by the transfer of photo-excited electrons from silicide NDs to Si-QDs, has also been demonstrated.

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“…The metallic nature of the conductivity, low electrical resistance and thermal stability make them an optimal material in the production of Schottky diodes [1,2], IR detectors [3][4][5][6], field-effect transistor gates, MEMS technology and the metallic conjunctions in microchips [1]. In the last decade, platinum silicides applications in the quantum wires [7], quantum dots [8] and nanostructures based on them were reported.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature formation of platinum silicides on polycrystalline silicon

Chizh,

Dubkov,

Senkov

et al. 2020

Preprint

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Highlights Interface domain in magnetron sputtered and annealed Pt/poly-Si film is studied  Pt3Si and Pt2Si phases form at room temperature during Pt deposition on poly-Si  Interfacial film relaxation turns Pt3Si to Pt2Si due to annealing at 100 < T < 200°C  Pt3Si and Pt2Si transit to PtSi due to annealing at temperatures from 320 to 480°C  Pt3Si phase is detected up to the annealing temperature of 350°C

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Formation of Metal Silicide Nanodots on Ultrathin SiO<sub>2</sub> for Floating Gate Application

Cited by 18 publications

References 8 publications

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

(Invited) Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application

Low-temperature formation of platinum silicides on polycrystalline silicon

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