Formation of palladium silicide by rapid thermal annealing

Lévy, Didier; Grob, A.; Grob, J.J.; Ponpon, J.P.

doi:10.1007/bf00616966

Cited by 30 publications

(22 citation statements)

References 5 publications

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“…However, the growth of silicides under irradiation from our theoretical study indicate a view different from thermal diffusion in terms of the predominant diffusing species during the silicide formation, especially for the three silicides considered in this work. The estimated values of diffusivity of silicon in the three silicide layers under different defect generation rates at room temperature yielded results that lie within the range of integrated inter-diffusion coefficients of these silicides at their formation temperatures [2][3][4][5]15] and this also strongly corroborates silicon as the active diffusing species in the silicide layer under irradiation. The formation temperature of these silicides are shown in Table 4.…”

Section: Resultssupporting

confidence: 64%

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The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

Akintunde

Selyshchev

2016

Journal of Physics and Chemistry of Solids

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Abstract.A theoretical approach is developed that describes the formation of a thin-film of AB-compound layer under the influence of radiation-induced vacancy. The AB-compound layer is formed as a result of a chemical reaction between the atomic species of A and B immiscible layers. The two layers are irradiated with a beam of energetic particles and this process leads to several vacant lattice sites creation in both layers due to the displacement of lattice atoms by irradiating particles. Aand B-atoms diffuse via these lattice sites by means of a vacancy mechanism in considerable amount to reaction interfaces A/AB and AB/B. The reaction interfaces increase in thickness as a result of chemical transformation between the diffusing species and surface atoms (near both layers). The compound layer formation occurs in two stages. The first stage begins as an interfacial reaction controlled process, and the second as a diffusion controlled process. The critical thickness and time are determined at a transition point between the two stages. The influence of radiation-induced vacancy on layer thickness, speed of growth, and reaction rate is investigated under irradiation within the framework of the model presented here. The result obtained shows that the layer thickness, speed of growth, and reaction rate increase strongly as the defect generation rate rises in the irradiated layers. It also shows the feasibility of producing a compound layer (especially in near-noble metal silicide considered in this study) at a temperature below their normal formation temperature under the influence of radiation.

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Section: Resultssupporting

confidence: 64%

“…This process is termed reactive diffusion. The phenomenon of reactive diffusion is observed experimentally under both non-irradiation [2][3][4][5] and irradiation [6][7][8][9] conditions. The compound layer growth is shown to obey parabolic law (thickness is proportional to square root of time) in both cases.…”

Section: Introductionmentioning

confidence: 99%

The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

Akintunde

Selyshchev

2016

Journal of Physics and Chemistry of Solids

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“…Since the thickness growth of Pd 2 Si is diffusion limited the square of the thickness versus time should render a linear plot. This is illustrated in Figure 1A From Figure 1B the activation energy E A can be derived [8] and it was found to be 1.0 ± 0.1 eV, in close agreement with literature [7].…”

supporting

confidence: 86%

“…Pd and Si form Pd 2 Si at elevated temperatures. This already occurs at relatively low temperatures well below 200° C [6][7][8]. We validated this reaction via in situ four point probe resistance measurements in a vacuum oven.…”

mentioning

confidence: 76%

Novel test structures for temperature budget determination during wafer processing

Faber

Wolters

Schmitz

2010

2010 International Conference on Microelectronic Test Structures (ICMTS)

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No preference for poster or oral presentation Some process steps during wafer processing demand a carefully applied temperature budget. Novel test structures are presented for monitoring and determining this thermal budget during processing (such as sputtering or etching). Our system is based on well-defined silicidation reactions, simple to read out and enables an easy integration into existing lay-outs.

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“…Pd 2 Si begins forming after annealing at temperatures of 250°C and greater [26][27][28]. Chen and Chen [28] found that over a temperature range of 250-800°C, epitaxial Pd 2 Si formed on Si wafers, and in the temperature range of 850-1,000°C PdSi begins forming.…”

Section: Pd-sinw Solid-state Reactionsmentioning

confidence: 99%

Silicide formation in contacts to Si nanowires

2012

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Silicides, intermetallic compounds formed by the reaction of a metal and Si, have long been used as contacts for metal oxide semiconductor (CMOS) transistors and have more become interesting for other Si nanowire (SiNW) devices. In the following, experimental results for the Ti, V, Pt, Pd, Fe, and Ni-Si systems are reported and placed in the context of prior work on silicide formation from metal films on Si wafers. For the early transition metals Ti and V, the silicide is formed only underneath the contact pad and is Si-rich (MSi 2 ). For the middle transition metal Fe and late transition metals Pt and Pd, a metal-rich silicide was the first phase observed to form, but poor morphologies were common, making it a challenge to incorporate these contacts into nanowire devices. Nickel contacts were the only ones with well-behaved axial silicide growth away from the contact pad, and silicide formation was strongly dependent on the original SiNW orientation. These findings are discussed in terms of kinetic features of the metal-SiNW systems.

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Formation of palladium silicide by rapid thermal annealing

Cited by 30 publications

References 5 publications

The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion process

Novel test structures for temperature budget determination during wafer processing

Silicide formation in contacts to Si nanowires

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