Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxane

Silicon oxycarbide thin films deposited from viniltrimethoxysilane ion beams

“…The intense band around 1075 cm À 1 for the Si-O -Si asymmetrical stretching mode is spread over a wave number range from 950 to 1200 cm À 1 . In this spectra range the wagging mode of Si-CH 2 -Si, the rocking mode of Si -(CH 3 ) n around 980 -990 cm À 1 and Si-O -C around 1020-1090 cm À 1 overlap [11][12][13][14]. The absorption peak around 1000 cm À 1 seems to be broad because of the presence of organic groups bonding to the Si -C -O main network.…”

“…[14] 2800 -3100 C -H str. changing of the optical properties of the films is caused by the removal of Si -H bonds and the condensation of the film structure at increase of Si-C bond content.…”

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

“…In general, compounds with less than one oxygen atom per silicon in their structure (e.g., trimethylsilane, tetramethylsilane, dimethylphenylsilane, diphenylsilane, diphenylmethylsilane, and hexamethyldisiloxane), codeposited with an oxidant (e.g., N 2 O or O 2 ), are preferred (60,61). Radio frequency (13.56 MHz) plasma-assisted deposition of tetramethylsilane with N 2 O or O 2 produced the first thermally stable SiCOH material with a dielectric constant of 3.1 (60)(61)(62)(63). It is important to create network-forming Si-O-Si bonds in the SiCOH film.…”

A comparative study of plasma polymerized organic thin films on their electrical and optical properties

“…2 increases with increasing RF power. And C C stretching peak appears at about 1700 cm −1 [5]. These peaks also increase with increasing RF power.…”