Formation of SiO<sub>2</sub> buffer layer for LiNbO<sub>3</sub> thin films growth

Вакулов, З. Е.; Климин, В. С.; Rezvan, A A; Tominov, R. V.; Korzun, Ksenia; Kots, I. N.; Polyakova, V. V.; Ageev, O A

doi:10.1088/1742-6596/1410/1/012042

Cited by 2 publications

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“…Films are obtained with a thickness of 45-90 nm at the heater temperature of 600 • C on SiO 2 (100 nm)/Si structures. The effect of the SiO 2 buffer layer thickness on the morphological parameters of LiNbO 3 films is presented in [40].…”

Section: Experimental Methodsmentioning

confidence: 99%

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

et al. 2020

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Energy conversion devices draw much attention due to their effective usage of energy and resulting decrease in CO2 emissions, which slows down the global warming processes. Fabrication of energy conversion devices based on ferroelectric and piezoelectric lead-free films is complicated due to the difficulties associated with insufficient elaboration of growth methods. Most ferroelectric and piezoelectric materials (LiNbO3, BaTiO3, etc.) are multi-component oxides, which significantly complicates their integration with micro- and nanoelectronic technology. This paper reports the effect of the oxygen pressure on the properties of nanocrystalline lithium niobate (LiNbO3) films grown by pulsed laser deposition on SiO2/Si structures. We theoretically investigated the mechanisms of LiNbO3 dissociation at various oxygen pressures. The results of x-ray photoelectron spectroscopy study have shown that conditions for the formation of LiNbO3 films are created only at an oxygen pressure of 1 × 10−2 Torr. At low residual pressure (1 × 10−5 Torr), a lack of oxygen in the formed films leads to the formation of niobium oxide (Nb2O5) clusters. The presented theoretical and experimental results provide an enhanced understanding of the nanocrystalline LiNbO3 films growth with target parameters using pulsed laser deposition for the implementation of piezoelectric and photoelectric energy converters.

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Section: Experimental Methodsmentioning

confidence: 99%

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

et al. 2020

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“…Pulsed laser deposition (PLD) is mostly used for the growth of complex oxides [32][33][34][35] and when a particular threshold value of the laser power density is exceeded, stoichiometric growth of films is possible [36]. However, the physical mechanisms underlying this phenomenon have not yet been clarified [37].…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric Energy Harvester Based on LiNbO3 Thin Films

et al. 2020

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This paper reports the results of the influence of the energy of laser pulses during laser ablation on the morphology and electro-physical properties of LiNbO3 nanocrystalline films. It is found that increasing laser pulse energy from 180 to 220 mJ results in the concentration of charge carriers in LiNbO3 films decreasing from 8.6 × 1015 to 1.0 × 1013 cm−3, with the mobility of charge carriers increasing from 0.43 to 17.4 cm2/(V·s). In addition, experimental studies of sublayer material effects on the geometric parameters of carbon nanotubes (CNTs) are performed. It is found that the material of the lower electrode has a significant effect on the formation of CNTs. CNTs obtained at the same growth time on a sample with a Cr sublayer have a smaller diameter and a longer length compared to samples with a V sublayer. Based on the obtained results, the architecture of the energy nanogenerator is proposed. The current generated by the nanogenerator is 18 nA under mechanical stress of 600 nN. The obtained piezoelectric nanogenerator parameters are used to estimate the parameters of the hybrid-carbon-nanostructures-based piezoelectric energy converter. Obtained results are promising for the development of efficient energy converters for alternative energy devices based on lead-free ferroelectric films.

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Formation of SiO₂ buffer layer for LiNbO₃ thin films growth

Cited by 2 publications

References 14 publications

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Piezoelectric Energy Harvester Based on LiNbO3 Thin Films

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Formation of SiO2 buffer layer for LiNbO3 thin films growth

Cited by 2 publications

References 14 publications

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Piezoelectric Energy Harvester Based on LiNbO3 Thin Films

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Formation of SiO₂ buffer layer for LiNbO₃ thin films growth