This paper shows the results of study of the effect of SiO2 buffer layer thickness on the morphological parameters of nanocrystalline LiNbO3 films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO2 buffer layer from 10 nm to 50 nm, the roughness of LiNbO3 films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves.

No abstract

No abstract

The critical pressure of acetylene required for the formation of nanotubes on nickel catalytic centers of a given size was calculated by plasma chemical vapor deposition. It has been established that for a stable growth of carbon nanotubes on a catalytic center with a diameter of 20 nm, the critical pressure of acetylene should be 1.9 Pa, while the growth time of carbon nanotubes in length of 5 μm is 131 sec. Nickel was used as a material for the formation of catalytic centers. In the calculations, the averaged parameters of carbon nanotubes were used. This analysis allowed to form a number of criteria for the materials of the underlayer and catalytic centers, to obtain an array of carbon nanotubes with a high degree of verticality.

No abstract