2002
DOI: 10.1016/s0022-0728(02)00649-6
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Formation of the first monolayers of CdTe on Au(111) by electrochemical atomic layer epitaxy (EC-ALE): studied by LEED, Auger, XPS, and in-situ STM

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Cited by 54 publications
(44 citation statements)
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“…Ultrathin films of compound semiconductors exhibit different electronic, magnetic, optical, chemical, and mechanical properties that cannot be obtained in their bulk counterparts due to their quantum confinement effects. High quality compound semiconductor thin films are usually the result of excellent control over the growth process, generally at the nanometer scale [5]. The preparation of CdTe films by electrodeposition has been extensively investigated by many research groups.…”
Section: Introductionmentioning
confidence: 99%
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“…Ultrathin films of compound semiconductors exhibit different electronic, magnetic, optical, chemical, and mechanical properties that cannot be obtained in their bulk counterparts due to their quantum confinement effects. High quality compound semiconductor thin films are usually the result of excellent control over the growth process, generally at the nanometer scale [5]. The preparation of CdTe films by electrodeposition has been extensively investigated by many research groups.…”
Section: Introductionmentioning
confidence: 99%
“…Electrodeposition is an attractive method because of the small amounts of reactants required and the low cost of processing [6]. Various electrodeposition techniques such as codeposition [7], electrochemical atomic layer epitaxy (ECALE) [5,8,9], and pulse electrodeposition [10,11] have been developed for the growth of CdTe thin films. ECALE, developed by Gregory and Stickney [8], is the electrochemical analogue of atomic layer epitaxy (ALE).…”
Section: Introductionmentioning
confidence: 99%
“…Numerous compounds that have been successfully formed by electrochemical ALD, include II-VI compounds such as CdTe [44,[50][51][52][53][54][55][56], CdS [35,57], ZnSe [58], ZnS [57] and CdS/HgS superlattices [59], IV-VI compounds such as PbS [60], PbSe [43] and superlattice of PbSe/PbTe [33], as well as III-V compounds such as GaAs [61,62], InAs [63,64], InSb [65] and superlattices of InAs/InSb [65]. This paper will focus on the optimization of an electrochemical ALD cycle used for the growth of PbTe nanofilms on Au on glass substrates.…”
Section: Introductionmentioning
confidence: 99%
“…In ECALE, surface limited reaction means under potential deposition (UPD), which involves a formation of up to a monolayer of atoms on foreign substrates at potentials positive from the reversible Nernst potential in the same solution. Presently IIB-VIA compounds such as CdTe [6][7][8] , CdSe [9] and ZnSe [10] , and IIIA-VA compounds such as GaAs [11] , InAs [12] and InAs/InSb [13] have been studied by ECALE. In the previous work, we have already studied the formation of Bi 2 Te 3 by ECALE successfully [14,15] .…”
mentioning
confidence: 99%