Formation of the Si/Cu interface

Rojas, Cristián Guerra; Román, E.; Martín‐Gago, José A.

doi:10.1002/1096-9918(200008)30:1<570::aid-sia752>3.0.co;2-l

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…Thus, we can conclude that the signal mainly originates from a reacted layer. Spectra obtained for Cu deposited on Si were similar to those obtained for Si on Cu, in agreement with previous literature, 22 indicating that reacted layers formed in both experiments have similar compositions. A thicker Cu layer has to be deposited on Si before the characteristic spectra of the reacted layer was observed, consistent with a Cu rich stoichiometry of the reacted layer.…”

Section: Discussionsupporting

confidence: 90%

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Nixon

Vos

Bowles

et al. 2006

Surf. Interface Anal.

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The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron momentum. Momentum resolution is demonstrated to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has a well-defined electronic structure, different from either Si or Cu, and consistent with silicide formation. Information is obtained about the total bandwidth of the interface compound, effective Brillouin zone size and Fermi radius. No clear differences are observed in the electronic structure of the interface layer for Si deposited on Cu or Cu deposited on Si.

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Section: Discussionsupporting

confidence: 90%

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Nixon

Vos

Bowles

et al. 2006

Surf. Interface Anal.

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“…Additional peak splitting is observed in an energy range where the CMA has good absolute energy resolution and is attributed to copper silicide. 4,5 This peak splitting is apparent in the Si LVV peak of a reference film of Cu 5 Si (Fig. 2) confirmed as such by XRD.…”

Section: Copper/dielectrics Interfacial Reactionssupporting

confidence: 63%

Thin film analysis in microprocessor manufacturing using Auger electron spectroscopy

Dittmar¹

2004

Surface & Interface Analysis

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In the semiconductor industry, Auger electron spectroscopy is widely used for advanced process control and physical failure analysis. Quantified Auger depth profiles are typically based on the peak-to-peak intensities of the derivative Auger spectra and do not fully use the spectral information of the Auger peak. More sophisticated data processing procedures based on linear least square (LLS) fits are capable of separating superimposed Auger peaks thus providing access to any chemical state information.One example of an Auger analysis using LLS is the investigation of the interface reaction between copper interconnect and its silicon nitride based cap layer. The effect of the local environment on the silicon LVV Auger peak enables one to identify the chemical bonding of the modified copper. Another study of lead-tin alloy bump surfaces using chemical state analysis provides information about inhomogeneities of the tin oxidation and segregation.

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Formation of the Si/Ti interface

Palácio

Arranz

2007

Applied Surface Science

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Formation of the Si/Cu interface

Cited by 3 publications

References 11 publications

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Thin film analysis in microprocessor manufacturing using Auger electron spectroscopy

Formation of the Si/Ti interface

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