Formation of very thin oxide films on copper: Kinetics and mechanism

Krishnamoorthy, P.; Sircar, S. C.

doi:10.1007/bf00604475

Cited by 17 publications

(10 citation statements)

References 17 publications

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“…The data published in the literature most closely related to the present paper, insofar as temperature and oxygen pressure are concerned, are those of Rhodin 5,6 and those of Krishnamoorthy and Sircar. 7,8 There are many discrepancies in these studies with regard to the experimental observations, and also major questions relative to theoretical interpretation of the data obtained for the kinetics of growth of these extremely-thin-oxide films. Both aspects will be discussed herein.…”

Section: Introductionmentioning

confidence: 87%

“…(a) Comparison of the 25 • C data ofRhodin 5 with the curve derived from the Code 9 specimen data at 25 • C in the present study, together with superposition of the Krishnamoorthy and Sircar data 8 at 30 • C. (b) Comparison of data at 50 • C by Rhodin, 5 the 50 • C data ofKrishnamoorthy and Sircar,8 and the curve derived from the Code 62 specimen data at 50 • C in the present study.…”

mentioning

confidence: 89%

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Oxidation Kinetics of Epitaxial (100) Copper Films at 25°C and 50°C

Fromhold

Anderson

2004

Oxidation of Metals

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Very-thin-film kinetics data are presented for oxide growth on parent epitaxially formed (100) copper crystals at 25 and 50 • C with different oxygen pressures in the range 0.01 torr to 170 torr. The results are interpreted in terms of the model based on electric-field driven ionic diffusion associated with the electrostatic-potential difference created by an electron-tunnelcurrent-virtual equilibrium.

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Section: Introductionmentioning

confidence: 87%

mentioning

confidence: 89%

Oxidation Kinetics of Epitaxial (100) Copper Films at 25°C and 50°C

Fromhold

Anderson

2004

Oxidation of Metals

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“…The first contacts were made by MBE growth of an uncoupled ͓Co͑3 nm͒/Cu͑4 nm)] 25 multilayer on a Si 3 N 4 membrane with a pre-etched hole ͓Fig. 1͑b͔͒.…”

Section: Multilayer Point Contacts Based On Deposition On Pre-etmentioning

confidence: 99%

“…The rotation procedure gives an exposure to air of the sample during 20 min. In view of the rapid initial oxidation of Cu, 25 this results in an estimated oxide thickness of 0.5 nm. At room temperature the oxide formed is Cu 2 O, 25 which is a semiconductor.…”

Section: Origin Of the Gmr Of Contacts Based On Deposition On Pre-mentioning

confidence: 99%

“…In view of the rapid initial oxidation of Cu, 25 this results in an estimated oxide thickness of 0.5 nm. At room temperature the oxide formed is Cu 2 O, 25 which is a semiconductor. At low temperature the interfacial oxide layer will have a negative effect on the device performance, the extent of which is difficult to quantify.…”

Section: Origin Of the Gmr Of Contacts Based On Deposition On Pre-mentioning

confidence: 99%

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Giant magnetoresistance of magnetic multilayer point contacts

et al. 1999

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We have studied the giant magnetoresistance ͑GMR͒ in magnetic multilayer point contacts of three different types. The first generation contacts were made by deposition with molecular-beam epitaxy ͑MBE͒ of an uncoupled Co/Cu multilayer on a pre-etched hole in a thin membrane. These devices exhibited a GMR, but its ratio was low and, as deduced from finite element calculations, in many cases was dominated by the resistance of the multilayer electrode. When corrected for this, the maximum point-contact GMR was 3%. The multilayer structure at some depth in the constriction was disrupted, as observed by transmission electron microscopy. This was identified as a cause of the low GMR, together with contamination and an oxide layer in the constriction, resulting from ex situ sample rotation. The second generation was fabricated by sputtering of a coupled Co/Cu multilayer before etching of the nanohole, giving a proper multilayer at the constriction. Further, the GMR signal from the electrode was shorted by a thick Cu cap. This did not bring the expected increase of the GMR (ratioр5%), indicating that the so-called dead layers and the quality of the interface between the GMR system and the contacting metal were limiting. This interface quality was strongly improved for the third generation of contacts by using in situ rotation, while the question of multilayer quality was avoided by shifting to granular Co/Au. Granular Co/Au in the constriction was obtained by growing a discontinuous Co layer by MBE. The maximum GMR ratio of the granular contacts was 14%, an improvement of a factor 3. These contacts displayed small jumps in the GMR, two-level fluctuations in the resistance time trace and ballistic transport, the latter being evident from phonon peaks in the point-contact spectrum of a high resistance contact. ͓S0163-1829͑99͒01537-4͔

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A critical appraisal of the logarithmic rate law in thin-film formation during oxidation of copper and its alloys

Roy

Sircar

1981

Oxid Met

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Formation of very thin oxide films on copper: Kinetics and mechanism

Cited by 17 publications

References 17 publications

Oxidation Kinetics of Epitaxial (100) Copper Films at 25°C and 50°C

Oxidation Kinetics of Epitaxial (100) Copper Films at 25°C and 50°C

Giant magnetoresistance of magnetic multilayer point contacts

A critical appraisal of the logarithmic rate law in thin-film formation during oxidation of copper and its alloys

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