Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

Pan, Tung-Ming; Lu, Chih-Hung

doi:10.1063/1.3638490

Cited by 72 publications

(25 citation statements)

References 15 publications

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“…It should be mentioned that, in agreement with other observations related on thin "bulk" films, 14,15 no forming process 16 is needed in order to achieve the resistance switching operation. The devices are initially found in the HRS and switching to the LRS occurs as soon as the set voltage of þ0.5 V is reached.…”

supporting

confidence: 84%

Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature

Verrelli

Tsoukalas

Normand

et al. 2013

Applied Physics Letters

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In this work, we present symmetric metal-insulator-metal bipolar memristors based on room-temperature deposition of charged titanium-oxide nanoparticles formed in vacuum by a physical process. One of the most striking features of these devices is that they do not require a forming step, which is to be related to protrusions of the top electrode material inside the intrinsically porous nanoparticle films. Furthermore, we report that deposition under substrate biasing conditions strongly affects the structural and electrical properties of the produced titanium oxide nanoparticle films including their bipolar switching behaviour.

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supporting

confidence: 84%

Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature

Verrelli

Tsoukalas

Normand

et al. 2013

Applied Physics Letters

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“…By applying appropriate SET/RESET voltage (V SET =V RESET ) between top and bottom electrodes, the connecting and rupture of conducting filaments are triggered by three major physical mechanisms and results in different bipolar RS (BRS) and unipolar RS (URS) modes, namely electrochemical metallization of metal filaments for BRS, valance change effect of oxygen-vacancy filaments for BRS, and thermochemical effect for URS when Joule heating is predominant at RESET. 2) Among a wide range of materials showing RS phenomena, such as perovskite oxides, ferromagnets, chalcogenides, and binary metal oxides, [3][4][5][6][7][8][9] the binary metal oxides such as HfO 2 have been the most interesting because of their compatibility with advanced CMOS technology. 10,11) Furthermore, the RS modes in RRAM had been shown to depend strongly on the metal electrodes using an identical binary oxide.…”

Section: Introductionmentioning

confidence: 99%

Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

Lin

Hou

Lee

et al. 2013

Jpn. J. Appl. Phys.

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Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO 2 and ZrO 2 are distinct from the preferential bipolar RS and semiconductive low-resistance state in amorphous Al 2 O 3 and SiO 2 . Backside secondary ion mass spectrometry (SIMS) has shown the formation of Ni filaments in HfO 2 , in contrast to the formation of oxygen-vacancy filaments in Al 2 O 3 . The differences have been explained by strong dependence of Ni migration on the oxide crystallinity. Additionally, the RS mode can be further tailored using bilayer structures. The oxide layer next to the Si bottom electrode and its tendency of forming Ni filaments play significant roles in unipolar RS in the bilayer structures, in support of the conical-shape Ni filament model where the connecting and rupture of filaments for unipolar RS occur at the smallest diameter near the bottom electrodes. #

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“…The observed in the works under discussion effect of resistive properties of HTSCnormal metal heterojunctions influenced by the electric field is the evidence in favor of a so-called filamentary model with electroforming. Recently several investigations in the field of technologies of non-filamentary nonvolatile memory based on metalinsulator Mott transition in nickel oxide and other transition-metal compounds have appeared [48,49]. It is assumed that electroforming process proves the filamentary mechanism of RS.…”

Section: Prospects Of Usage Of Htsc-based Memristors In Applications mentioning

confidence: 99%

Memristive Properties of Oxide-based High-Temperature Superconductors

Tulina

Иванов

2020

J Supercond Nov Magn

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The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors (HTSCs): Bi2Sr2CaCu2O8+y (BSCCO), is presented in order to reveal functional properties of HTSCs which become apparent in the effects under discussion, prospects of usage of HTSC based memristors in applications and search for new mechanisms of strongly correlated nature to realize new generation memristors. The properties are: undergoing metal insulator transition at oxygen doping, transport anisotropy, existence of charge reservoirs through which doping of conductive copper oxygen plays is carried out. These are the main functional properties of HTSCs which permit to use them in memristors. By the example of study of bipolar effect of resistive switching in HTSC based heterojunctions it is shown how one can form memristor structures based on HTSCs using their functional properties.

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Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

Cited by 72 publications

References 15 publications

Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature

Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature

Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

Memristive Properties of Oxide-based High-Temperature Superconductors

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