Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories

Abstract

Resistive switching behaviors are studied for the rapid thermal annealing (RTA) Ga 2 O 3 thin film embedding a Cr metal layer. By modifying the thickness, area, and RTA temperature of the device, the thermal-induced resistive switching is similar to those induced by the electrical forming process. The conducting filaments composed of oxygen vacancies are created by the Cr diffusion and oxidization during RTA. The related carrier conduction mechanism obeys space charge limited conduction theory accompanied by the formation/rupture of the conducting filaments at the interface between Ti and Cr:Ga 2 O 3 film. This study demonstrates a convenient process to fabricate forming-free resistive switching memory devices. V

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour

“…This oxide is-due to its high gallium excess-a heavily self-doped, n-type semiconductor 29 . Recently, several authors reported that a-GaO x thin films with Pt as TE and ITO or TiN as bottom electrode (BE) reveal a counter figure-eight hysteretic loop in their I-V characteristics 30,31 . They proposed a filamentary switching mechanism, similar to that introduced for TiO x , to explain GaO x switching [30][31][32] .…”

Controlling Structural and Electrical Properties of Pt Nanopowder-Dispersed SiO2Film

“…동결 건조법 [2], 습식 합성법 [3][4][5][6], 물리 기상 증착법 (PVD; physical vapor deposition) 또는 분자선 에피택시 (MBE; molecular beam epitaxy) 증착법과 후속 열처리를 이용한 응집 (agglomeration) 방법 [7][8][9][10], 고전압 이온 건 (gun)을 이용한 이온 임플란테이션(ion implantation) [11,12], 멀티 소스 또는 타겟을 사용한 co-evaporation과 코스퍼터 링 (co-sputtering) 방법 [1,13,14 메모리 [6,7,10,[15][16][17], 저항변화 메모리(ReRAM; resistance random access memory) [4,8,9,13,14,18] …”

“…Interestingly, conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, which was explained by the significant increase of electron density. 메모리 [6,7,10,[15][16][17], 저항변화 메모리(ReRAM; resistance random access memory) [4,8,9,13,14,18 …”

Nonvolatile conductive filaments resistive switching behaviors in Ag/GaO x /Nb:SrTiO3/Ag structure

“…In recent years, reversible resistance switching behaviors in gallium oxide thin films were obtained and investigated [7][8][9][10]. For instance, Gao et al [7] investigated the effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films and pointed out that the migration of oxygen vacancies in the vicinity of the electrode area plays an important role in the resistive switching process.…”