Four A/D LSIs for a portable VCR system

Horie, N.; Tanihara, Yozo; Okabe, T.; Kaneko, Kenji; Shibata, Akira; Fukushima, Isao

doi:10.1109/isscc.1981.1156250

1981 IEEE International Solid-State Circuits Conference. Digest of Technical Papers 1981

DOI: 10.1109/isscc.1981.1156250

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Four A/D LSIs for a portable VCR system

N. Horie

Yozo Tanihara²,

T. Okabe³

et al.

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1984

1987

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Cited by 3 publications

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I²L device circuit model with layout patterns

Shinmi

Inohira

Nagata

et al. 1984

Electron. Comm. Jpn. Pt. I

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An algorithm for CAD simulation model is discussed for an I2L circuit important for a bipolar analog‐digital hybrid LSI. A versatile modeling method is proposed here in which variation of the planar pattern of the I2L circuit is included. In this method the I2L device is divided into the injector, base electrode, collector and base termination. Each section is modeled by lumped elements consisting of transistors, diodes and resistors. the model parameters are expressed in terms of the main current density and main carrier concentration density of the I2L device. From this model, the terminal current and the carrier transit time can be related to the device shape. the terminal voltage dependence of the terminal current and the terminal current dependence of the gain bandwidth product as simulated by this method agreed within 10% with the measured values in the practical range (injector current 1 ‐ 100 μA). As an example of the application of this method to the I2L circuit, the injector current level dependence of the delay time of the 5‐stage ring oscillator and the usable current range vs. the input frequency of the 10‐stage counter are calculated and the simulation values agreed with the measured data within 10%.

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I²L device circuit model with layout patterns

Shinmi

Inohira

Nagata

et al. 1984

Electron. Comm. Jpn. Pt. I

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show abstract

10K Gate I/sup 2/L and 1K Component Analog Compatible Bipolar VLSI Technology - HIT-2

Washio

Watanabe

Okabe

et al. 1985

IEEE J. Solid-State Circuits

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CMOS-Compatible bipolar and I²L technology using three-level epitaxial layers for analog/Digital VLSI's

Washio

Okada

Okabe

1987

IEEE Trans. Electron Devices

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Four A/D LSIs for a portable VCR system

Cited by 3 publications

References 3 publications

I²L device circuit model with layout patterns

I²L device circuit model with layout patterns

10K Gate I/sup 2/L and 1K Component Analog Compatible Bipolar VLSI Technology - HIT-2

CMOS-Compatible bipolar and I²L technology using three-level epitaxial layers for analog/Digital VLSI's

Contact Info

Product

Resources

About

Four A/D LSIs for a portable VCR system

Cited by 3 publications

References 3 publications

I2L device circuit model with layout patterns

I2L device circuit model with layout patterns

10K Gate I/sup 2/L and 1K Component Analog Compatible Bipolar VLSI Technology - HIT-2

CMOS-Compatible bipolar and I2L technology using three-level epitaxial layers for analog/Digital VLSI's

Contact Info

Product

Resources

About

I²L device circuit model with layout patterns

I²L device circuit model with layout patterns

CMOS-Compatible bipolar and I²L technology using three-level epitaxial layers for analog/Digital VLSI's