Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

The authors present the impact of fast charging and the ambient on the intrinsic mobility of a WS2 field-effect transistor (FET) by fast pulsed current–voltage (I–V) measurement. Conventional electrical analysis using the direct current (DC) I–V method in air causes charge trapping during measurement, making it impossible to determine the intrinsic device characteristics. Thus, the authors employed the fast pulsed I–V method in vacuum to minimize fast transient charging and interfacial redox-induced charging during measurement. The authors obtained field-effect mobility values of 16.27 and 14.92 cm2/V s in vacuum and air, respectively, using the fast I–V technique; these mobility values were 52%–65% higher than those obtained by the DC method in vacuum and air, respectively. The authors also determined the intrinsic mobility of the WS2 FET using the threshold voltage shift with pulse amplitude.

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Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor

Park

Woo

Jeon

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

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Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor

Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor

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