FRAM-the ultimate memory

Philofsky, Elliott

doi:10.1109/nvmt.1996.534679

Cited by 14 publications

(10 citation statements)

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“…To harden the system against radiation effects and to provide long-term storage possibility both for firmwares and for telemetry, the processor has been augmented with parallel (256 kbit FM18W08 from Ramtron) and SPI (two 2 Mbit FM25V20 chips from Ramtron) ferroelectric random access memories. This memory technology has been proven to be very radiation tolerant [15]. The FRAM has currently three main usages: storing state variables in a non-volatile form (using Atmega1280's external memory interface, allowing fast and easily usable access), ensuring correct satellite operation even if the microcontroller resets, and storing firmware images.…”

Section: Telemetry and Controlmentioning

confidence: 99%

“…This means that the loss of functionality in those parts does not endanger the mission as long as the duplicates are functioning, making catastrophic failure less likely. Command systems of the satellite have been reinforced by ferroelectric random access memories (FRAM) [15], which have been used on CubeSats before [16], but to our knowledge not to this extent (using FRAM as microcontroller RAM, external storage and statesavers).…”

Section: Introductionmentioning

confidence: 99%

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Design and pre-flight testing of the electrical power system for the ESTCube-1 nanosatellite

Pajusalu¹,

Ilbis²,

Ilves³

et al. 2014

Proc. Estonian Acad. Sci.

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This work describes the final design and implementation of the electrical power system for ESTCube-1, a 1-unit CubeSat tasked with testing the electrostatic tether concept and associated technologies for the electric solar wind sail in polar low Earth orbit. The mission required an efficient and reliable power system to be designed that could efficiently handle highly variable power requirements and protect the satellite from damage caused by malfunctions in its individual subsystems, while using only commercial-off-the-shelf components. The system was developed from scratch and includes a novel redundant standalone nearly 90% efficient maximum power point tracking system, based on a commercially available integrated circuit, a lithiumion battery based fault-tolerant power storage solution, a highly controllable and monitorable power distribution system, capable of sustaining loads of up to 10 W, and an AVR microcontroller based control solution, heavily utilizing non-volatile ferroelectric random access memories. The electrical power system was finalized in January 2013 and was launched into orbit on 7th of May, 2013. In this paper, we describe the requirements for the subsystem, the design of the subsystem, pre-flight testing, and flight qualification.

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Section: Telemetry and Controlmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and pre-flight testing of the electrical power system for the ESTCube-1 nanosatellite

Pajusalu¹,

Ilbis²,

Ilves³

et al. 2014

Proc. Estonian Acad. Sci.

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“…Other memory structures such as the FRAM [12], a high density non volatile memory cell, can in principle be integrated within the MuGFET / PDSOI planar merged technology.…”

Section: Memorymentioning

confidence: 99%

A merged MuGFET and planar SOI process

Marshall

Cleavelin

Xiong

et al. 2007

2007 IEEE International SOC Conference

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Tri-gate MuGFET (Multi-Gate FET) offers advantages compared to bulk silicon, with respect to circuit design, but also has some potential drawbacks in thermal effects and width quantization. An advantage of MuGFET is that with the same processing it is possible to make planar SOI structures, which, depending upon the active silicon thickness, may be fully or partially depleted. This work investigates circuit operation on a merged MuGFET and planar SOI process.

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“…In fact the commercially available 256-kbit FRAM from Ramtron [20] is three orders of magnitude behind the 256-Mbit DRAM from Micron [21]. Nevertheless, many believe that ferroelectric memories will be the dominant memory technology in the future [22]. The circuit innovations that are discussed in this paper unveil a continuous endeavor among those in the field toward this future.…”

Section: A Ferromagnetic Coresmentioning

confidence: 99%