2016
DOI: 10.1016/j.jallcom.2015.10.045
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Frequency and temperature dependence of dielectric and electrical properties of TFe 2 O 4 (T = Ni, Zn, Zn 0.5 Ni 0.5 ) ferrite nanocrystals

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Cited by 91 publications
(21 citation statements)
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“…The authors related the resistive and capacitive elements to the charge transfer and accumulation, respectively, at the grain boundaries of the materials. The dominating role of the grain boundaries was attributed to the nanometric grain size of the samples . Other authors have used equivalent circuits consisting of a series connection of two R‖C elements to model the charge transfer and accumulation at both, the grain and the grain boundaries of ferrite materials ,.…”
Section: Resultsmentioning
confidence: 99%
“…The authors related the resistive and capacitive elements to the charge transfer and accumulation, respectively, at the grain boundaries of the materials. The dominating role of the grain boundaries was attributed to the nanometric grain size of the samples . Other authors have used equivalent circuits consisting of a series connection of two R‖C elements to model the charge transfer and accumulation at both, the grain and the grain boundaries of ferrite materials ,.…”
Section: Resultsmentioning
confidence: 99%
“…Filler material comes in different forms; these forms could be in metals, semiconducting oxides, dielectric ceramics, and carbon materials [14]. The study of the complex permittivity and electrical properties of the NiFe2O4, ZnFe2O4, and Zn0.5Ni0.5Fe2O4 nanoparticles was conducted through chemical (pyrophoric reaction) technique [15]. They found that the interfacial polarization in both dielectric and complex impedance studies of those samples can be attributed to predominant interfacial effect due to their nonmetric grain sizes.…”
Section: Advances In Polymer Technologymentioning
confidence: 99%
“…With further increase in temperature above 300°C, ε r increases again, particularly at lower frequencies, which may be attributed to dipolar and interfacial polarization . The interfacial polarization is caused primarily by the continuous accumulation of charges at the grain boundaries and leakage current on account of the magnetic phase, which is coincident with tanδ varying with temperature in Fig. (b).…”
Section: Resultsmentioning
confidence: 85%