Frequency and voltage dependence of admittance characteristics of Al/Al 2 O 3 /PVA:n-ZnSe Schottky barrier diodes

Frequency and Voltage-dependent Electrical Parameters, Interface Traps, and Series Resistance Profile of Au/(NiS:PVP)/n-Si Structures 

“…Because at very low or intermediate frequencies, the electronic charges located at any traps or surfacestates can be easily followed an alternating ac signal and hence supplied both an excess C and G to the real value of them contrary to high frequencies because of the relaxation-time () of them have not enough time to charge movement by ac current. [4][5][6][7][8][9][10].…”

“…As a result, both the surface states and polarization are usually more effective both in inversion and depletion regions, but Rs is effective only at the accumulation region. The voltage or energy-dependent profile of Nss can be determined by several methods such as Hill-Coleman, low-high capacitance (Clf-Chf), and admittance or parallel-conductance [8,[14][15][16]. Among them, the first method (Hill-Coleman) is valid only when C-V or G-V plot has a peak.…”

“…The practical status is maybe different in these regions because of the existence of these Nss, interlayer, Rs, and polarization. Therefore, the quality of electronic devices by an organic interface layer is dependent on different parameters like the interface/surface states (Nss), surface-morphology/preparation, the thickness and permittivity of the interlayer, series-resistance (Rs), the doping level of acceptor/donor-atoms (Na/Nd) and their uniformity, frequency, voltage, and temperature [1][2][3][4][5][6][7][8][9]. When an oxide interlayer for example semiconductor insulator, metal, organic material, and ferroelectric performed between metal and semiconductor interface, MS structure turns into MIS, MPS, and MFS type structure and then gains capacitor features which can store electronic charges or energy [10][11][12][13].…”

“…The charges at traps/states can easily follow the alternating ac signal and hence may be produced an excess capacitance/conductance (Cex/Gex) to the real value of them by depending on their life/relaxation-time ( of them and the frequency or period of the measured C and G values [4,[7][8][9][10][11][12][13].…”

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“…As seen in the figure, SBD1 and SBD2 exhibit typical SBD behavior of inversion, depletion and accumulation regions whereas such behavior for SBD3 is not clear due to thick interlayer. There are peaks in C-V plots of SBD1 and SBD2; such peak behavior appears due to density of interface states (N ss ) and series resistance (R s ) such that N ss is dominant in depletion region whereas R s is dominant in the high accumulation region (Altındal and Uslu 2011, Çetinkaya et al 2015, Sharma andTripathi 2016).…”