Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view

Masson, Pascal Le; Autran, Jean‐Luc; Houssa, Michel; Garros, X.; Leroux, C.

doi:10.1063/1.1518561

Cited by 72 publications

(55 citation statements)

References 11 publications

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“…Consistently with this interpretation, we observed experimentally that such discrepancies become larger as the frequency is decreased and a clear C͑V͒ step develops, similarly to what has been reported in previous studies on planar structures. 15 In …”

Section: Inas Nanowire Metal-oxide-semiconductor Capacitorsmentioning

confidence: 99%

InAs nanowire metal-oxide-semiconductor capacitors

Roddaro

Nilsson

Astromskas

et al. 2008

Applied Physics Letters

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We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10nm HfO2 layer and using a top Cr∕Au metallization as one of the capacitor’s electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

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Section: Inas Nanowire Metal-oxide-semiconductor Capacitorsmentioning

confidence: 99%

InAs nanowire metal-oxide-semiconductor capacitors

Roddaro

Nilsson

Astromskas

et al. 2008

Applied Physics Letters

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“…These features suggest the presence of a large number of interface traps in the Si band gap. 21 Since the very thin Hf-Al-O film resulted in large leakage current, the C -V measurement at different frequencies showed a large discrepancy. Therefore, only the 1 MHz result is shown in Fig.…”

Section: ϫ5mentioning

confidence: 99%

Study of interfacial reaction and its impact on electric properties of Hf–Al–O high-k gate dielectric thin films grown on Si

Lee

Wong

Chan

et al. 2003

Applied Physics Letters

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Amorphous thin films of Hf-Al-O ͑with atomic ratio of Al/Hf of about 1.4͒ were deposited on ͑100͒ p-Si substrates by pulsed-laser deposition using a HfO 2 and Al 2 O 3 composite target. Transmission electron microscopy was employed for a detailed study of the interfacial reaction between the Hf-Al-O films and the Si substrates. Islands of Hf silicide formed from interfacial reaction were observed on the surface of the Si substrate. The formation of Hf silicide is attributed to the presence of Al oxide in the films that triggers the reaction between Hf atoms in the amorphous Hf-Al-O films and Si under an oxygen deficient condition. The impact of silicide formation on the electrical properties was revealed by high-frequency capacitance-voltage (C -V) measurements on metal-oxide-semiconductor capacitors. The observed abnormal C -V curve due to interfacial reaction was discussed.

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“…The practical solution of the problem associated with the interface trap characterization in tunnel MOS-devices is the use of the charge pumping method [109,110]. When the leakage current does not impede the interface trap analysis, the interface states in the (100)Si/SiO 2 and (100)Si/HfO 2 entities can be reliably inferred from the capacitance frequency dispersion [111,112] or ac admittance spectroscopy combined with the CV methods [113]. In the latter work, it has been observed that the D it density measured on Hf-containing samples subjected to a high-temperature anneal in oxygen and a subsequent passivation in hydrogen is still higher than that inferred for the equally treated (100)Si/SiO 2 interface.…”

Section: Steady-state Ac Conductancementioning

confidence: 99%

“…The (111)Si/SiO 2 interface can be characterized by dangling bond defects of only one type-Р b centers. This is a sp3 silicon-dangling bond directed along the [111]. The defect is of C 3v symmetry and can exist in four orientations in the silicon lattice [55,56].…”

Section: Electron Spin Resonance Spectroscopymentioning

confidence: 99%

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Fedorenko¹

2017

Ion Implantation - Research and Application

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Ion implantation is a nonequilibrium doping technique, which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Due to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology, ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nms to several microns in depth range). Ion implantation introduces point defects in solids. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.

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Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view

Abstract: Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors

Cited by 72 publications

References 11 publications

InAs nanowire metal-oxide-semiconductor capacitors

InAs nanowire metal-oxide-semiconductor capacitors

Study of interfacial reaction and its impact on electric properties of Hf–Al–O high-k gate dielectric thin films grown on Si

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

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