Frequency conversion analysis of noise in heterojunction bipolar transistor oscillators including periodically modulated noise sources

Kramer, B.A.

doi:10.31274/rtd-180813-9732

Cited by 2 publications

(1 citation statement)

References 34 publications

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“…Well-known results for the NCM for shot noise [3], [4] in junctions are verified using the simulator. In addition, we present simulation results which show good agreement between the modulated stationary noise model [15], [5], [6] for low-frequency noise in circuit simulation and microscopically cyclostationary GR noise sources in semiconductor device simulation.…”

Section: Introductionmentioning

confidence: 70%

Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Sanchez

Bosman

Law

2003

IEEE Trans. Electron Devices

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Abstract-The simulation of generation-recombination (GR) noise under periodic large-signal conditions in a partial differential equation-based silicon device simulator is presented. Using the impedance-field method with cyclostationary noise sources, it is possible to simulate the self-and cross-spectral densities between sidebands of a periodic large-signal stimulus. Such information is needed to develop noise correlation matrices for use with a circuit simulator. Examples are provided which demonstrate known results for shot noise in bipolar junction transistors. Additional results demonstrate the upconversion of low-frequency GR noise for microscopically cyclostationary noise sources and provide evidence for applying the modulated stationary noise model for low-frequency noise when there is a nearly quadratic current dependence.

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Section: Introductionmentioning

confidence: 70%

Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Sanchez

Bosman

Law

2003

IEEE Trans. Electron Devices

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Characterization and analysis of viscoelastically loaded thin film piezoelectric resonators incorporated in an oscillator microsensing system

O'Toole

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HR 100 Photo-polymerization Analysis 90 HR 100 photocross-Iinking reaction 91 Polymer film preparation 91 Measurement procedure 93 HR 100 UV-Visible Absorption Analysis 94 m HR 100 Coated QCM Analysis 97 QCM measurement results: Case 1 98 Areal mass density variation 99 Elasticity variation 102 Viscosity variation QCM measurement results: Case 2 104 Areal mass density variation 105 Elasticity variation 108 Viscosity variation 108 HR 100 Coated QCM Conclusion CHAPTER 5. OSCILLATOR MICROSENSOR SYSTEM DESIGN

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Frequency conversion analysis of noise in heterojunction bipolar transistor oscillators including periodically modulated noise sources

Cited by 2 publications

References 34 publications

Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

Characterization and analysis of viscoelastically loaded thin film piezoelectric resonators incorporated in an oscillator microsensing system

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