Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor

Kim, Hyun Woo; Kwak, Been; Kim, Jang Hyun; Kwon, Daewoong

doi:10.1109/ted.2022.3173245

Cited by 6 publications

(5 citation statements)

References 16 publications

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“…With the ambipolar device characteristics, it is possible to fundamentally remove odd harmonic components from the output without the need for additional circuits. For example, research on carbon nanotubes (CNTs), graphene, and TFET [7][8][9][10][11] has recently been conducted. The TFET is a representative device with ambipolar characteristics.…”

Section: Introductionmentioning

confidence: 99%

Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor

Min,

Shin,

Kim

et al. 2024

Phys. Scr.

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The Frequency Division Multiplexing (FDM) has been used in wireless communication to transmit large amounts of data. FDM separates and transmits multiple information streams through a single communication channel simultaneously. The capacity to store information increases with higher frequencies. However, the problem of maintaining stability arises with high frequencies. To address this, a frequency multiplier (FM) is employed to convert a low-frequency source, which is easier to stabilize, into a high frequency. To ensure the proper functioning of FM, it is crucial to achieve symmetrical matching between two adjacent waveforms of two cycles of output from one cycle of input. This paper introduces three techniques for FM operation. Firstly, the implementation of tunnel FET (TFET) is proposed to solve the issue of harmonics, which commonly occurs in existing FMs. TFET possesses ambipolar properties, making it suitable for solve harmonic issue. Secondly, high-k (HK) dielectric materials are utilized to enhance on-current and ambipolar current. Lastly, hetero gate dielectrics (HG) are employed to increase the ambipolar current, ensuring its equivalence to the on-current. This contrasts with existing TFETs that use HG to reduce ambipolar current. We can control on-current and ambipolar current, respectively, by adjusting HK length at the source-side and HK at the drain-side using the HG structure. In addition, achieving matching currents is essential for obtaining symmetrical adjacent output waveforms, which is the primary objective of FM. From the proposed structure, we confirmed that frequency doubling is possible by symmetrically matching on-current and ambipolar current for FM to operate normally.

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Section: Introductionmentioning

confidence: 99%

Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor

Min,

Shin,

Kim

et al. 2024

Phys. Scr.

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“…Benefiting from the high permittivity of ferroelectric gate-all-around stack, an effective oxide thickness reaches 1.4 nm, which is lower than most of the reported FeFETs (27). Many simulation investigations have shown performance improvement using the ferroelectric TFET (ferro-TFET) as a steep-slope device (28,29), nonvolatile memory (30), and a reconfigurable frequency multiplier (31) for low-power logic, storage, and high-frequency systems, respectively, but an experimental verification is lacking. Our ferro-TFET with SS < 60 mV/ dec and a state-of-the-art memory window (MW) >2 V with ferroelectric switching therefore unlocks this promising device technology toward its potential applications.…”

Section: Introductionmentioning

confidence: 99%

Sensing single domains and individual defects in scaled ferroelectrics

2023

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Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors. We electrically measure abrupt threshold voltage shifts and quantify the appearance of new individual defects activated by the ferroelectric switching. Our results show that ferroelectric films can be integrated on heterostructure devices and indicate that the intrinsic electrostatic control within ferroelectric TFETs provides the opportunity for ultrasensitive scale-free detection of single domains and defects in ultra-scaled ferroelectrics. Our approach opens a previously unidentified path for investigating the ultimate scaling limits of ferroelectronics.

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“…[1][2][3][4][5][6][7][8][9][10] After observation and experimental verification of negative capacitances (NC) in ferroelectric materials (Fe), subthreshold swing based research and development has been taken seriously by semiconductor research community. [10][11][12][13][14][15] The ferroelectric materials based research&development, [11][12][13][14][15][16] provides a big domainto overcome the classical limitations [17][18][19][20][21][22] of conventional CMOS technology for low power. The non-identical polarization entire-near conventional dielectric, help to boost up the electricbeyond the end of the silicon roadmap.…”

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confidence: 99%

“…In case of tunnel FET based circuit and system design technology, maximum I ON , possible low SS and ambipolar current (I amb ) are required. [19][20][21] For a design engineer, the optimization of desirable device figure of merits(FoMs)likewise on-current (I ON ), off-sate response (I OFF ), subthreshold swing (SS) for low power is most critical task at device level. In addition of classical challenges and limitations of conventional CMOS low power design parameters, in case of tunnel FET technology, ambipolar current is additionaldemerits has been found.…”

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confidence: 99%

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Optimization for Device Figure of Merit of Ferroelectric Tunnel FET using Genetic Algorithm

Guenifi

Rahi

Benmahdi

et al. 2023

ECS J. Solid State Sci. Technol.

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A tunnel field effect transistor (TFET) is a gate-controlled, band to band tunneling (BTBT) transport of charge carriers having low subthreshold swing(SS < 60 mV/decade|T = 300K). With TFETs, low-ION is a built-in problem which limits its adaptability to high-speed, low-power uses. To overcome this limitation, a conventional double-gate TFET was constructed having ferroelectric (BaTiO3)/HfO2 gate materials and a source/channel region with Si1-xGex/Si semiconductor channel composition. This design enhances the ION and lowers the subthreshold swing (SS). Analysis using the Silvaco simulator shows improvement in ION current approximately 103 times better than that of conventional DGTFET, without affecting IOFF. Ultimately, a change in ION from 10-8 A/µm to 10-5 A/µ was measured for VDS~0.5 V at room temperature. IOFF of ~10-20 A/µm was measured. In addition to this, a first time genetic algorithm has been used for the optimization of ferroelectric TFET (Fe-TFET) device design parameters like a subthreshold swing (SS), ambipolar current (Iamb), and ION by using device design parameters, doping (NS, ND), dielectric (εOX), and work function (WF). This research shows that Fe-Tunnel can play a leading role for super-low-power applications in advanced VLSI circuits and systems.

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Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor

Cited by 6 publications

References 16 publications

Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor

Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor

Sensing single domains and individual defects in scaled ferroelectrics

Optimization for Device Figure of Merit of Ferroelectric Tunnel FET using Genetic Algorithm

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