Friction-induced selective etching on silicon by TMAH solution

Zhou, Chao; Li, Jiaming; Wu, Lei; Guo, G. X.; Wang, Hongbo; Chen, Peng; Yu, Bingjun; Qian, Linmao

doi:10.1039/c8ra07064d

Cited by 7 publications

(4 citation statements)

References 35 publications

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“…Accordingly, etching rate in scratched regions was slow down, resulting in the formation of hillock nanostructures. Similar performance and mechanisms were assigned on the friction-induced selective etching on silicon surface when TMAH solution was employed [67].…”

Section: Mechanisms For Scratch Masking In Friction-induced Selectivementioning

confidence: 60%

“…It is found that fabrication width was effectively controlled by the normal load, while fabrication height almost remained to stable after the scratches produced under contact pressure beyond 6.3 GPa were etched by KOH solution [27,56]. Zhou et al also found that the fabrication height is irrelevant with normal load during friction-induced selective etching in TMAH solution as long as the mask was active [67]. The fabrication height was both closely related with etching time in the two anisotropic etchants, i.e., KOH and TMAH solution, and the difference in etching time-dependent selective etching was attributed to subsurface deformation induced by diamond tip with different curvature radii.…”

Section: Effects Of Normal Load and Etching Time On Friction-induced mentioning

confidence: 99%

“…Fabrication of nanopatterns on Si surface through friction-induced selective etching in (a) KOH and (b) TMAH solution[27,67] Normal load-dependent friction-induced selective etching in HF/HNO 3 mixture[69] …”

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confidence: 99%

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Friction-Induced Nanofabrication: A Review

Qian

2021

Chin. J. Mech. Eng.

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As the bridge between basic principles and applications of nanotechnology, nanofabrication methods play significant role in supporting the development of nanoscale science and engineering, which is changing and improving the production and lifestyle of the human. Photo lithography and other alternative technologies, such as nanoimprinting, electron beam lithography, focused ion beam cutting, and scanning probe lithography, have brought great progress of semiconductor industry, IC manufacturing and micro/nanoelectromechanical system (MEMS/NEMS) devices. However, there remains a lot of challenges, relating to the resolution, cost, speed, and so on, in realizing high-quality products with further development of nanotechnology. None of the existing techniques can satisfy all the needs in nanoscience and nanotechnology at the same time, and it is essential to explore new nanofabrication methods. As a newly developed scanning probe microscope (SPM)-based lithography, friction-induced nanofabrication provides opportunities for maskless, flexible, low-damage, low-cost and environment-friendly processing on a wide variety of materials, including silicon, quartz, glass surfaces, and so on. It has been proved that this fabrication route provides with a broad application prospect in the fabrication of nanoimprint templates, microfluidic devices, and micro/nano optical structures. This paper hereby involved the principals and operations of friction-induced nanofabrication, including friction-induced selective etching, and the applications were reviewed as well for looking ahead at opportunities and challenges with nanotechnology development. The present review will not only enrich the knowledge in nanotribology, but also plays a positive role in promoting SPM-based nanofabrication.

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Section: Mechanisms For Scratch Masking In Friction-induced Selectivementioning

confidence: 60%

Section: Effects Of Normal Load and Etching Time On Friction-induced mentioning

confidence: 99%

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Friction-Induced Nanofabrication: A Review

Qian

2021

Chin. J. Mech. Eng.

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“…Wet etching is regarded as a promising alternative approach due to its simple, flexible and low-cost features. However, the directional etchants used in silicon etching, including alkali metal hydroxides (NaOH, KOH), [17,26] amino hydroxide (NH 4 OH, (CH 3 ) 4 NOH) [27], and ethylenediamine/catechol/water mixtures (called EDP or EPW) [28], are based on the selective etching for specific crystal faces (such as Si(100) and Si(110)). Namely, the etching rate in one crystal face is much faster than that in other directions (such as Si(111) is the so-called etching 'stop plane') [29].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale directional etching features and mechanism of HF/HNO₃etchant

Bi-you¹,

Wang²,

Huang³

2021

J. Micromech. Microeng.

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Large-scale and periodic silicon nanostructure arrays are an essential component for various functional devices. However, the conventional selective etching mechanism of specific crystal faces for monocrystalline silicon generally achieves slope or vertical morphology, which greatly limits the preparation of other morphology of silicon nanostructures. In this work, the conventional isotropic etchant HF/HNO3 has successfully achieved nanoscale directional etching and cambered morphology on monocrystalline silicon surface for the first time by changing the synchronous process of oxidation and dissolution into an asynchronous process. Based on the self-assembled monolayer colloidal crystal templates, large-area and high-quality nanopore arrays are prepared on the monocrystalline silicon surface. Particularly, the directional etching ability of HF/HNO3 etchant is further confirmed by combining with electron beam lithography and scanning probe lithography technologies. Hence, this nanoscale directional etching mechanism and etchants provide a promising strategy to achieve cambered morphology nanopores on the monocrystalline silicon surface.

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