From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization

Leroux, M.; Lahreche, H.; Sèmond, F.; Laügt, M.; Feltin, E.; Schnell, N.; Beaumont, B.; Gibart, P.; Massies, J.

doi:10.4028/www.scientific.net/msf.353-356.795

Cited by 23 publications

(12 citation statements)

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“…Furthermore, a convex bowing of 42 mm of the substrate which indicates a mean compressive stress in the whole structure was measured at room temperature after the growth of the GaN structures. This strain state is confirmed by the strain-sensitive low-temperature (10 K) PL [27] energy of the neutral donor bound exciton line denoted I 2 which dominates in the band edge PL of GaN. This PL energy position reflects the strain state in a thin (about 0.2 mm) GaN region underneath the surface.…”

Section: Growth Of Thick Gan Buffer Layers and Algan/gan Heterostructmentioning

confidence: 58%

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Cordier

Portail

Chenot

et al. 2008

Journal of Crystal Growth

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Section: Growth Of Thick Gan Buffer Layers and Algan/gan Heterostructmentioning

confidence: 58%

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Cordier

Portail

Chenot

et al. 2008

Journal of Crystal Growth

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“…Despite the thin GaN channel and a high dislocation density, the GaN band edge emission is clearly observed for all samples. The band edge energy is located at about 3.54 eV indicating that GaN channels are strongly compressively strained on AlN . The inset of Figure shows the dependency of the band edge energy (excitonic energy) as a function of the GaN channel thickness.…”

Section: Resultsmentioning

confidence: 99%

Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH₃‐MBE

Rennesson

Leroux

Khalfioui

et al. 2017

Physica Status Solidi (a)

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AlN‐based HEMTs grown on silicon by ammonia‐assisted molecular beam epitaxy (NH3‐MBE) are demonstrated and studied. As shown by photoluminescence, the very thin GaN channel (35–55 nm‐thick) is compressively strained on the 250 nm‐thick relaxed AlN buffer layer grown on silicon substrate. The structure is then completed by an 8 nm‐thick AlN barrier and 2 nm‐thick GaN cap. Despite an ultrathin total epilayer (only ≈300 nm‐thick), a high 2DEG density (≈2.7 × 1013 cm−2) is measured by Hall effect. Room temperature mobility values, as high as 636 cm2 V−1 s−1, are measured. They are higher than those reported on similar structures grown on sapphire, SiC and bulk AlN substrates, showing the interest of growing such structures on silicon substrate. Also, low contact resistance values are obtained, as low as 0.18 Ω mm, by using a basic fabrication process.

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“…The only noticeable fluctuations being observed on GaN grown on Si substrates are probably due to a strain gradient at the sample periphery, that is very difficult to eliminate for such a large lattice mismatched heteroepitaxy (∆a/a = -17%). Indeed, the residual strain is dependent on the layer quality and also the substrate [3][4][5]. Assuming an energy shift of δE/δε xx ≈ 9.5 eV [4], one can deduce from the I 2 peak position dispersion on GaN template (+/-0.35 meV) a very low dispersion in strain δε xx ≈ +/-3.7x10 -5 which weakly affects the dispersion of the AlGaN and the GaN QW PL peaks energies.…”

Section: Methodsmentioning

confidence: 99%

“…Indeed, the residual strain is dependent on the layer quality and also the substrate [3][4][5]. Assuming an energy shift of δE/δε xx ≈ 9.5 eV [4], one can deduce from the I 2 peak position dispersion on GaN template (+/-0.35 meV) a very low dispersion in strain δε xx ≈ +/-3.7x10 -5 which weakly affects the dispersion of the AlGaN and the GaN QW PL peaks energies. On the other hand, the high dislocation density (about 8x10 9 cm -2 ) usually present in our 1.5 µm thick AlGaN layers grown on Si(111) [6] is responsible for higher strain fluctuation and consequently the broadening of the PL peaks, and on-wafer dispersion of the peak positions.…”

Section: Methodsmentioning

confidence: 99%

Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Cordier¹,

Pruvost²,

Sèmond³

et al. 2006

Phys. Status Solidi (c)

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In the present work, AlGaN/GaN quantum wells and High Electron Mobility Transistors (HEMTs) have been grown by molecular beam epitaxy on Si(111) and GaN on sapphire templates. The optical quality and the electrical properties were studied by low temperature photoluminescence and Hall effect. These measurements attest the quality of these heterostructures and demonstrate the high on-wafer uniformity of the materials grown on 50 mm wafers, and this even for the III-nitrides grown on Silicon.1 Introduction In recent years, the Molecular Beam Epitaxy (MBE) has begun to demonstrate potentialities to realize high quality GaN based heterostructures for electronics as well as optoelectronic applications. Beyond the achievement of high quality GaN based heterostructures, MBE is now dealing with other process considerations such as reproducibility and uniformity on various substrates like sapphire, silicon carbide or silicon. In order to address this latter point, AlGaN/GaN quantum wells (QWs) and HEMT heterostructures have been grown with a Riber MBE reactor designed for the growth of IIINitrides materials. Ammonia was used as nitrogen source, whereas effusion cells supplied group III elements. The growth were performed on 50 mm Si(111) wafers and on 50 mm MOCVD grown GaN on sapphire templates. The layer optical properties were assessed by using low temperature photoluminescence (PL) performed across the wafers, whereas the electrical quality was studied by Hall effect after the realization of van der Pauw cloverleaf and Hall bar devices. The effect of heteroepitaxial growth on the layers quality was studied by comparing results obtained on Silicon with those obtained on the low defect density GaN templates.

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From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization

Cited by 23 publications

References 0 publications

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH₃‐MBE

Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

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From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization

Cited by 23 publications

References 0 publications

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE

Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

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Product

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Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH₃‐MBE