From Smart-Cut to Soft-Cut: Mechanisms of Hydrogen Plasma Supported Layer Exfoliation in Silicon

Job, R.; Düngen, W.; Ma, Yue; Horstmann, J. T.

doi:10.1149/1.2355776

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…One might speculate that either another type of hydrogenated vacancy defect complex now comes into play, or the electrically inactive defects -e. g. V-H 4 -are transformed back again to an electrically active defect state by a release of hydrogen. The latter explanation was ruled out, since we recently observed that fully hydrogenated vacancy complexes such as V-H 4 are stable at least up to 500 °C (14). Hence, we supposed that oxygen-related complexes, for example, hydrogenated V x -O y -H z complexes -might cause the enhanced n-type doping around R p .…”

Section: He + -Implantation and Subsequent H-plasma Treatmentmentioning

confidence: 97%

Detection of Vacancy Distributions by Decoration with Hydrogen

Job¹,

Niedernostheide²,

Schulze³

et al. 2009

ECS Trans.

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A well-known method for the determination of vacancy distributions in silicon is based on the decoration of vacancies with in-diffused platinum (Pt) and subsequent profiling of the Ptdistribution with DLTS (Deep Level Transient Spectroscopy) analysis. The vacancy profile can then be correlated with the substitutional Pt profile. However, there are significant drawbacks of this method: The in-diffusion of platinum is a high-temperature step, which already can alter the vacancy profile; moreover, DLTS measurements with a suitable depth resolution are time-consuming and difficult. Therefore, it is proposed in this paper to decorate the vacancies with hydrogen by processes finally resulting in the formation of vacancy-and hydrogen-related donor and acceptor states. The determination of such doping profiles and by this the detection of vacancy distributions can be easily enabled by depthresolved spreading resistance measurements with a very good spatial resolution. Hydrogen atoms for the decoration of vacancies can be incorporated by plasma exposure or ion implantation.

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Section: He + -Implantation and Subsequent H-plasma Treatmentmentioning

confidence: 97%

Detection of Vacancy Distributions by Decoration with Hydrogen

Job¹,

Niedernostheide²,

Schulze³

et al. 2009

ECS Trans.

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show abstract

“…Furthermore, in the fabrication of MEMS, photonics and THz devices, costly SOI wafers or successive deposition/isolation/etching of sacrificial layers are frequently used to float the structures where needed [15]. On the other hand, there is a technique called soft-cut reported in [16] where lower doses of hydrogen implantation is used to fabricate SOI structures and a plasma hydrogenation step is employed to compensate the lower doses.…”

Section: Introductionmentioning

confidence: 99%

High aspect ratio hydrogenation-assisted lateral etching of (1 0 0) silicon substrates

Kayyalha¹,

Nilchi²,

Ebrahimi³

et al. 2011

J. Micromech. Microeng.

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In this paper a hydrogenation-assisted high aspect ratio lateral etching of (1 0 0)-oriented Si wafers is presented. After desired patterning, vertical etching is used to etch the silicon substrate to achieve appropriate heights. A plasma hydrogenation step is applied to create defects at a desired depth. The created damage is finally dissolved in Secco etchant, releasing an ultrathin silicon layer. The effect of hydrogen ions in the formation of defects at a desired depth has been investigated. Process variables such as hydrogenation temperature, time and plasma power were examined to observe their influence on lateral etching. In addition to scanning electron microscopy, EDX analysis has been performed to observe the presence of a silicon layer underneath chromium which served as the protection layer.

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Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation

et al. 2008

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By means of two-point-probe Spreading Resistance (SR) analyses, the formation and evolution of hydrogen-related and vacancy-related donor and acceptor states were studied in helium implanted and subsequently hydrogen plasma-treated n-type Float-Zone (FZ) silicon wafers. He + -implantation was carried out at 3.75 MeV and 11 MeV, applying fluences of 1⋅10 14 cm -2 and 2⋅10 13 cm -2 . After 15-min post-implantation H-plasma exposures at substrate temperatures between 350 °C and 500 °C, distinct surplus doping profiles were observed in the subsurface layers of the treated FZ Si samples. Also acceptor-like states occurred, at least partially compensating for the initial n-type doping, so that even buried p-type layers could be created under appropriate process conditions. The nature of the involved defect complexes will be discussed.

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From Smart-Cut to Soft-Cut: Mechanisms of Hydrogen Plasma Supported Layer Exfoliation in Silicon

Cited by 4 publications

References 19 publications

Detection of Vacancy Distributions by Decoration with Hydrogen

Detection of Vacancy Distributions by Decoration with Hydrogen

High aspect ratio hydrogenation-assisted lateral etching of (1 0 0) silicon substrates

Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation

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