FT-IR and XPS analysis of a-Si1-xGex:H thin films

Makadsi, M. N.; Alias, M. F. A.; Essa, Abbas A.; AI-Azawi, H.R.

doi:10.1016/s0960-1481(02)00061-7

Cited by 15 publications

(14 citation statements)

References 11 publications

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“…4 shows the FT-IR spectra of the μc-SiGe:H films deposited at SiH 4 /GeH 4 flow rate ratios from 45 to 90. The stretching absorption mode of Si\H and Ge\H were observed at 2000 cm −1 and 1890 cm −1 , respectively, whereas the stretching mode of Si\H 2 and Ge\H 2 were observed at 2100 cm −1 and 2000 cm −1 [18,19]. The Si\H and Ge\H stretching modes were isolated, and a stable bond, which leads to the stable passivation of dangling bonds at, as well as weak Si\Si or Ge\Ge bonds were observed in the fully hydrogenated Si thin films.…”

Section: Resultsmentioning

confidence: 99%

Crystallization behavior of microcrystalline silicon germanium

et al. 2013

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Section: Resultsmentioning

confidence: 99%

Crystallization behavior of microcrystalline silicon germanium

et al. 2013

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“…In the spectrum of the Fe 2 O 3 -CuO/CP catalyst, the main peaks of Fe 2p 3/2 and Fe 2p 1/2 shift to higher binding energies by 0.3 eV in comparison with the CuO-free sample, implying an aggregation of Cu 2+ oxidic entities. Such energy shift (DEB) indeed ascribes to the difference in the electronegativity between the two elements [18]. The electronegativity of Cu (1.9 paulings) is larger than that of Fe (1.83 paulings).…”

Section: Xps Analysismentioning

confidence: 99%

“…It has been revealed that the first peak in the range of 528.6-528.9 eV is the O 1s and O -species), which has a higher mobility than the lattice oxygen, can take an active part in the total oxidation of methane to hydrocarbons [18] -CuO/CP catalyst, the maxima of the two hydrogen consumption peaks are shifted toward lower temperatures from 275°C to 255°C and 480°C to 420°C, respectively. Furthermore, in part due to the overlap of the CuO hydrogen consumption peak, the first peak becomes higher and sharper, suggesting a higher reduction rate in the temperature range of 215°C to 300°C [23].…”

Section: Xps Analysismentioning

confidence: 99%

Post‐Plasma Catalysis for Methane Partial Oxidation to Methanol: Role of the Copper‐Promoted Iron Oxide Catalyst

et al. 2010

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Methane-air partial oxidation to methanol over a ceramic-supported Fe 2 O 3 -CuO catalyst was investigated in a post-plasma catalytic reactor at ambient conditions. The multicomponent catalyst exerted a better catalytic performance than the monocomponent Fe 2 O 3 catalyst. Characterization of the catalysts by XPS showed that incorporation of the CuO additive to a Fe 2 O 3 -based catalyst resulted in an increase of lattice oxygen in the surface of the catalyst which facilitated selective methane oxidation. Hydrogen temperature-programmed reduction revealed that addition of the CuO promoter could improve the reduction performance of the catalyst. Moreover, this catalyst showed excellent stability and resistance against carbon deposition in the extended reactions while maintaining catalytic activity. A post-plasma catalytic mechanism is proposed with three main pathways to methanol synthesis.

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“…The spectra can be divided in two regions characterized by distinct vibrational modes: [24][25][26][27] bond stretching bands are between 1900 and 2150 cm −1 , while the other vibrational modes ͑bending, wagging, rocking͒ are found in the 400-1000 cm −1 range.…”

Section: Infrared Spectroscopymentioning

confidence: 99%

Characterization of hydrogenated amorphous germanium compounds obtained by x-ray chemical vapor deposition of germane: Effect of the irradiation dose on optical parameters and structural order

Arrais

Benzi

Bottizzo

et al. 2007

Journal of Applied Physics

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Hydrogenated nonstoichiometric germanium materials have been produced by x-ray activated-chemical vapor deposition from germane. The reactions pattern leading to the solid products has been investigated. The dose effect on the composition, the local bonding configuration, and structural characteristics of the deposited solids has been studied using infrared absorption and Raman spectroscopy and has been discussed. Optical parameters have been also determined from ultraviolet-visible spectrophotometry data. The results show that the solids are formed by a random bound network of germanium and hydrogen atoms with a-Ge zones dispersed in the matrix. The Raman results and optical parameters indicate that the structural order, both short-range and intermediate-range, decreases with increasing irradiation time. This behavior suggests that the solid is involved in the reactions leading to the final product and indicates that the formation of amorphous germanium zones is stimulated by postdeposition irradiation, which induces compositional and structural modifications.

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FT-IR and XPS analysis of a-Si1-xGex:H thin films

Cited by 15 publications

References 11 publications

Crystallization behavior of microcrystalline silicon germanium

Crystallization behavior of microcrystalline silicon germanium

Post‐Plasma Catalysis for Methane Partial Oxidation to Methanol: Role of the Copper‐Promoted Iron Oxide Catalyst

Characterization of hydrogenated amorphous germanium compounds obtained by x-ray chemical vapor deposition of germane: Effect of the irradiation dose on optical parameters and structural order

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