Full 26GHZ MMIC Chipset for Telecom Applications in SMD-Type Packages

Beilenhoff, K.; Quentin, P.; Tranchant, S.; Vaudescal, O.; Parisot, Martin; Daembkes, Heinrich

doi:10.1109/euma.2002.339234

Cited by 6 publications

(2 citation statements)

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“…The very low cost packaging solutions are clearly the only ones able to reach the current and future market prices. Among them, plastic package approach is a serious candidate, provided that the limited quantities can be properly managed [1]. This paper describes the technology, methodology and the results obtained on a LNA when improved performances of frequency bandwidth, noise figure, output power and output IP3 are considered together with high frequency SMD plastic packaging.…”

Section: Introductionmentioning

confidence: 99%

Plastic Packaged High Linearity Low Noise Amplifier for 12-30GHz Multi-band Telecom Applications

Byk

Quentin

Camiade

et al. 2006

2006 IEEE MTT-S International Microwave Symposium Digest

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The packaged MMIC design and measured performance of a High Linearity and Low Noise Amplifier from 12 to 30GHz are reported in this paper. A mature 0.25,um gate length Low Noise Pseudomorphic HEMT technology has been used with a BCB-based protection allowing easy and high reliability chip integration into plastic packages. A standard plastic QFN SMD package has been successfully used: 25dB typical gain has been measured with less than 2.0 dB noise figure in all the frequency band from 12 to 30GHz and more than 26dBm Output IP3 has been measured in the 18-26GHz frequency band.

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Section: Introductionmentioning

confidence: 99%

Plastic Packaged High Linearity Low Noise Amplifier for 12-30GHz Multi-band Telecom Applications

Byk

Quentin

Camiade

et al. 2006

2006 IEEE MTT-S International Microwave Symposium Digest

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“…The trends of microwave and millimeterwave ICs is toward cost effective packaged products, compatible with Surface Mount Device (SMD) assembly line [1]. Among the number of existing SMD approaches for microwave devices (flange mount, lead frame etc.…”

Section: Introductionmentioning

confidence: 99%

A chip-scale packaged amplifier MMIC using broadband hot-via transitions

Bessemoulin

Gaessler

Marschall

et al.

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

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-The performance of RF hot-via transitions for use in chip-scale package (CSP) MMICs are presented. This is illustrated with the realization of a low noise amplifier MMIC using optimized hot-vias. Based on our standard 0.25-µm GaAs low-noise PHEMT process, with BCB coating and backside metallization, this 2-stage low noise microstrip amplifier mounted with bumps on a carrier substrate achieved a linear gain of 15 dB over the 15-to 32 GHz frequency range. To the author's knowledge, this is the first demonstration of chip-scale packaged active MMICs using hot-via transitions.

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