Full Device Exposure Laser Thermal Annealing: High performance and high yield junction formation process

Huet, Karim; Boniface, C.; Negru, R.; Aing, Phannara; Venturini, J.

doi:10.1109/rtp.2010.5623599

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…This is supposed to improve the recrystallization process, with a regrown layer having lower density of defects once it has solidified [32], as seen in previous works [1,33]. The additional advantage of this laser set up is its wider laser spot (referred to as 'full die' exposure), as compared to other available lasers, avoiding the use of 'stitching' patterns to cover bigger areas, as some authors observed that laser stitching patterns increases the dark current of laser annealed devices [4].…”

Section: Introductionmentioning

confidence: 91%

“…Furthermore, the melting and solidification processes are faster than in conventional techniques, which allows for a significant reduction of the heat diffusion, allowing the dopant redistribution profiles to be shallower and steeper. This feature is particularly interesting for activating the dopants in the drain and source of metal oxide semiconductor (MOS) transistors [4]. In the case of shallow dopants in Si, extensive research has been conducted [2,[5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

Montero¹,

Caudevilla²,

Algaidy³

et al. 2023

Semicond. Sci. Technol.

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Hyperdoped or supersaturated semiconductors are gathering the attention of industry and research institutions due to their sub-bandgap photon absorption properties. In this study, two fast and non-invasive techniques, Time-Resolved Reflectometry (TRR) and Haze Measurements, are applied to infer the melt and solidification regimes of Ti supersaturated 300 mm silicon wafers, aiming to ease the characterization process towards high volume manufacturing of supersaturated materials. Ti supersaturation is attained by using an ion implantation process with a dose 3x1015 cm-2, which amorphizes the surface. Crystalline quality is then recovered by means of a XeCl UV Nanosecond Laser Annealing (NLA) process. TRR technique is used to determine two different melting and solidification processes of the laser annealed implanted surface. A first brief, low temperature peak (α peak) is associated with the melting process of the amorphized surface, followed by a longer peak/plateau (β1 peak/plateau), linked to the melting process of the crystalline phase below the amorphized layer, at sufficiently high laser fluences. Haze technique is used to indirectly measure the crystalline quality after the solidification process of the laser-annealed surface. Atomic Force Microscopy (AFM) measurements are used to obtain the surface roughness value and cross-section HRTEM micrographs to check crystalline quality.

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Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

Montero¹,

Caudevilla²,

Algaidy³

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The additional advantage of this laser set up is its bigger laser spot as compared to other available lasers, avoiding the use of "stitching" patterns to cover bigger areas. Some authors observed that laser stitching patterns increased the dark current of laser annealed devices 100 , especially when the laser spot is smaller than the sensor size. When the laser spot size is bigger than the sensor it is called full die exposure.…”

Section: Xecl Excimer Laser Of Screen-lassementioning

confidence: 99%

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Álvarez¹

2021

Springer Theses

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I also have to thank many people from France, where I spent six wonderful months of my life doing my internship in STMicroelectronics. I felt very welcome from the first day. Although not from France, thanks to Rodrigo Blasco, classmate from the Master's degree, who introduced some very good friends in Grenoble: Akhil, Marion, Nathaniel, Mada, Saptarshi, with whom I have shared great moments. To my neighbours David Bastian and Clarie Paris, because they saved me from really awful moments up there in France. They welcomed me as a friend when I could not even speak French. At STMicroelectronics, to all the people that made possible the project, in special to François Roy and Olivier Noblanc, for believing in the project from the first day. The huge time dedication and effort of my workmates must be acknowledged as well: Andrej Suler, Boris Rodrigues, Sonnarith Chhun, Thomas Dalleau, Romuald, Bastien, Carlos, Nils, Yolenne, and so many people from the fabrication and characterisation processes, which pushed the wafers into the fab to deliver them on time. Finally, from CEA-LETI (Grenoble), special thanks to Sébastien Kerdiles and Pablo Acosta Alba. They were always helpful and I could learn most of my knowledge regarding the recrystallization processes and laser interaction with matter, opening a new and fascinating world to me.

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Experimental Techniques

Álvarez¹

2021

Near Infrared Detectors Based on Silicon Supersaturated With Transition Metals

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Full Device Exposure Laser Thermal Annealing: High performance and high yield junction formation process

Cited by 4 publications

References 6 publications

Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

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