Full integration of a pressure-sensor system into a standard BiCMOS process

Scheiter, T.; Kapels, H.; Oppermann, K.-G.; Steger, M.; Hierold, Christofer; Werner, W.; Timme, H.-J.

doi:10.1016/s0924-4247(98)00029-6

Cited by 36 publications

(19 citation statements)

References 1 publication

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“…As an example, Infineon Technologies fabricated an intra-CMOS capacitive pressure sensor from a 0.8 µm BiCMOS process by using the CMOS poly-Si gate layer as the MEMS structural layer [24]. The capacitor is formed by a fixed electrode in the substrate generated by implantation and a movable membrane (top electrode) of polycrystalline silicon.…”

Section: Cmos-mems Integration: Why How and What?mentioning

confidence: 99%

Introduction

Ruiz

Meyer

Witvrouw

2013

Poly-SiGe for MEMS-above-CMOS Sensors

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Section: Cmos-mems Integration: Why How and What?mentioning

confidence: 99%

Introduction

Ruiz

Meyer

Witvrouw

2013

Poly-SiGe for MEMS-above-CMOS Sensors

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“…In the early 1990s, digital interface circuits and digital compensation and calibration techniques were developed 18 . Infineon Technologies manufactured and marketed monolithically integrated surface micromachined capacitive pressure sensor with digital readout and programming interface 19 which has become a platform technology for other integrated pressure sensors. Recently, Wise and Lemmorhirt 20 reported chip-scale integration of data-gathering, microsystems for sensing and storing environmental biological and medical data.…”

Section: Pressure Sensorsmentioning

confidence: 99%

Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration

Saha¹,

Chaudhuri²

2009

DSJ

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A review of the integration of the complementry metal oxide semiconductors (CMOS) circuit with the microelectromechanical systems (MEMS) structures for sensing and RF applications has been presented. Specifically, the integrated mechanical sensors, chemical gas sensors, and biochemical sensors have been discussed. Application of MEMS as switches, varactors, and inductors and their integration in RF circuits has also been highlighted. The fabrication and design challenges for the CMOS-MEMS integration have been described. A new design methodology for integration of thermal effects in an integrated pressure sensor has been proposed.

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“…In most cases, a dedicated structural polysilicon layer is deposited and annealed in order to achieve the desired film thickness and stress. An exception in that respect are the KP100 series pressure sensors by Infineon Technologies, which use the standard capacitor polysilicon layer of a 0.8 µm BiCMOS process also as mechanical layer [24].…”

Section: Intra-cmos Micromachiningmentioning

confidence: 99%