Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Oh, Jin Seok; Lim, Yong; Lim, Hyun Suk; Oh, Y.T.; Kim, J.S.; Shin, Jaekyung; Park, Jai Hyung; Song, Yoo Sung; Ryoo, Kyung−Chang; Lim, Dokshin; Park, S.S.; Kim, J.I.; Kim, Kee Joo; Yu, Jonghan; Yeung, F.; Jeong, Changwook; Kong, Jeong-Taek; Kang, Duck Hee; Koh, G.H.; Jeong, Gitae; Jeong, Hyemin; Kim, Kinam

doi:10.1109/iedm.2006.346905

Cited by 116 publications

(94 citation statements)

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“…S9 shows that even for small sizes the on-current remains the same as for larger ones. For the 30 Â 30 nm 2 cell, the current density of 1.1 Â 10 7 A cm À 2 was achieved, which approaches on-current density values of singlecrystalline Si vertical diode at 90 nm technology node 31 . The mechanism behind filamentary TS is related to local current path formation at the threshold voltage by the electro-thermal model, which has been previously described by Kostylev 32,33 .…”

Section: Discussionmentioning

confidence: 62%

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

et al. 2013

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Stackable select devices such as the oxide p-n junction diode and the Schottky diode (one-way switch) have been proposed for non-volatile unipolar resistive switching devices; however, bidirectional select devices (or two-way switch) need to be developed for bipolar resistive switching devices. Here we report on a fully stackable switching device that solves several problems including current density, temperature stability, cycling endurance and cycle distribution. We demonstrate that the threshold switching device based on As-Ge-Te-Si material significantly improves cycling endurance performance by reactive nitrogen deposition and nitrogen plasma hardening. Formation of the thin Si 3 N 4 glass layer by the plasma treatment retards tellurium diffusion during cycling. Scalability of threshold switching devices is measured down to 30 nm scale with extremely fast switching speed of B2 ns.

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Section: Discussionmentioning

confidence: 62%

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

et al. 2013

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“…An access device connected to each memory cell provides the current pulses. In most cases this is a transistor (bipolar junction transistor [9] or field effect transistor [10]), but PCRAM cells addressed with diodes have been reported also [11]. The very large difference of several orders of magnitude between the electrical resistances of the two phases is used as the storage mechanism.…”

Section: Principle Of Phase Change Technologymentioning

confidence: 98%

Pcram

Raoux¹,

Ritala

2013

Atomic Layer Deposition for Semiconductors

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“…Both single-crystal Si [21] and poly-Si diodes [22][23][24] have been developed as a select device for PCM arrays. To operate PCM with diode selectors, diodes need to provide ON-current density above 8 MA/cm 2 and OFF-current density below 100 A/cm 2 .…”

Section: Silicon Diodesmentioning

confidence: 99%

Memory Select Devices

Chen

2014

Emerging Nanoelectronic Devices

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Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Cited by 116 publications

References 0 publications

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

Pcram

Memory Select Devices

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