2009
DOI: 10.1016/j.solmat.2009.04.009
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Full process for integrating silicon nanowire arrays into solar cells

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Cited by 81 publications
(56 citation statements)
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“…Thanks to the strongly enhanced light trapping among the Radial Junction (RJ) forest [1,2], a much thinner absorber (i-layer) can be used to increase the built-in electric field for a better carrier separation and minimized light-induced degradation, which is well known for planar Si thin film devices [10]. Although reasonable RJ thin film solar cells with 48% efficiency have been demonstrated on etched crystalline silicon wafer [11,12], the efficiency of most of the early RJ prototypes has been mostly limited by a series of problems, including catalyst contamination, conformal coating and electrical quality in radial junction formation [13][14][15][16][17], leading to a poor conversion efficiency (o2%). Moreover, the stability of RJ a-Si:H solar cells, built on randomly oriented SiNWs, has never been studied experimentally mainly due to the lack of a reasonable RJ solar cell platform to evaluate this critical aspect.…”
Section: Introductionmentioning
confidence: 99%
“…Thanks to the strongly enhanced light trapping among the Radial Junction (RJ) forest [1,2], a much thinner absorber (i-layer) can be used to increase the built-in electric field for a better carrier separation and minimized light-induced degradation, which is well known for planar Si thin film devices [10]. Although reasonable RJ thin film solar cells with 48% efficiency have been demonstrated on etched crystalline silicon wafer [11,12], the efficiency of most of the early RJ prototypes has been mostly limited by a series of problems, including catalyst contamination, conformal coating and electrical quality in radial junction formation [13][14][15][16][17], leading to a poor conversion efficiency (o2%). Moreover, the stability of RJ a-Si:H solar cells, built on randomly oriented SiNWs, has never been studied experimentally mainly due to the lack of a reasonable RJ solar cell platform to evaluate this critical aspect.…”
Section: Introductionmentioning
confidence: 99%
“…The second one is a deposition step, that allows to deposit a passivation layer which covers and protects the lateral walls of the nanostructure respect to the successive dry etching steps. This second process is performed by using a mixture of CHF 3 and Ar as passivating gases. Typical Bosch processes present etching rates very high, in the range of 1 mm min À1 [31].…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Several authors, including Perraud et al, 117 have reported cells consisting of n-type SiNWs grown on p-type wafers The 40-50 nm diameter, 1 mm long SiNWs were imbedded in a spin on glass (SOG) matrix. The surface was planarised for contacting and a front contact nger grid of Ni/Al on ITO applied together with and an Al back contact.…”
Section: Sinw Solar Cells Grown Using Au Catalystmentioning
confidence: 99%