Full-wave electromagnetic modeling of terahertz RTD-gated HEMTs

Tenneti, S.; Nahar, Niru K.; Volakis, John L.

doi:10.1109/aps.2013.6711228

Cited by 2 publications

(2 citation statements)

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“…These gain results portray the ideal situation of the performance we desire for the RTD-gated HEMT. Our work presented in this paper and also previously in [8], has focused on modeling a realistic device model that matches these gain curves. We believe this approach provides confidence that a device exhibiting the mentioned plasmonic properties can be structurally realizable.…”

Section: Distributed Circuit Model For Rtd-hemtmentioning

confidence: 96%

“…These have increased transconductance that leads to improved gain at higher frequencies. Indeed, recent work [8][9][10] demonstrated that simple design modifications, such as those of placing resonant tunneling diodes (RTDs) at the gate, can minimize losses and increase the resonance and gain of HEMTs. This performance improvement was demonstrated using distributed models that implement hydrodynamic equations in Agilent's Advanced Design System (ADS) software, shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Full-wave modeling of THz RTD-gated GaN HEMTs

Tenneti

Nahar

Volakis

2015

Infrared Physics & Technology

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Modeling transistors at terahertz frequencies is challenging, because electromagnetic and quantum effects that are negligible in lower frequencies become limiting factors in device performance. Though previous work has focused on modeling the channel of a high-electron mobility transistor (HEMT) using hydrodynamic equations, a more complete toolset is needed to describe submillimeter-wave device gain performance. This paper introduces a simulator that couples fullwave Maxwell's equations with Schrodinger-based charge transport equations, and is used to evaluate the gain performance of a GaN HEMT at THz. This novel simulator is also used to evaluate the effect on gain when a resonant tunneling diode (RTD) is integrated with a HEMT. Upon validation with published work, we state the feasibility of RTD-gated GaN HEMT structures that have resonances up to 2.3 THz and gain up to 6 dB.

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Section: Distributed Circuit Model For Rtd-hemtmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%