Full-wave modeling of THz RTD-gated GaN HEMTs

Abstract

Modeling transistors at terahertz frequencies is challenging, because electromagnetic and quantum effects that are negligible in lower frequencies become limiting factors in device performance. Though previous work has focused on modeling the channel of a high-electron mobility transistor (HEMT) using hydrodynamic equations, a more complete toolset is needed to describe submillimeter-wave device gain performance. This paper introduces a simulator that couples fullwave Maxwell's equations with Schrodinger-based charge transport equations, and is used to evaluate the gain performance of a GaN HEMT at THz. This novel simulator is also used to evaluate the effect on gain when a resonant tunneling diode (RTD) is integrated with a HEMT. Upon validation with published work, we state the feasibility of RTD-gated GaN HEMT structures that have resonances up to 2.3 THz and gain up to 6 dB.

Analysis of terahertz double dielectric structure patch antenna using nitride semiconductors

“…[15][16][17][18][19] There are reports on various GAN-based terahertz devices. [20][21][22] This paper uses FDTD method for simulation analysis of patch antennas in order to fabricate terahertz-band receiving antennas loaded with GaN SBD. In Ga-N based SBD receivers, threshold voltage is high, and operating voltage of square-low detection grows high.…”

“…GaN has excellent material properties including wide bandgap and heteroepitaxial growth on Si substrate, thus promising higher output and production efficiency of terahertz transmitters and receivers 15–19 . There are reports on various GAN‐based terahertz devices 20–22 …”