Fully integrated microwave frequency synthesizer on heterogeneous silicon-III/V

Hulme, Jared; Kennedy, M. J.; Chao, Rui Lin; Liang, Linjun; Komljenović, Tin; Shi, Jin Wei; Szafraniec, Bogdan; Baney, D.M.; Bowers, John E.

doi:10.1364/oe.25.002422

Cited by 60 publications

(32 citation statements)

References 17 publications

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“…It has been extensively researched, and there has been a growing need for chip-scale lasers with narrow linewidth. In Figure 17, we compare the linewidth of widely-tunable lasers [23,[40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58], and a few clear trends can be noted. First is that the linewidth has steadily been improving from MHz range to kHz range in the past 20 years, and the second is that ring based tunable lasers (MRR) offer superior linewidth performance, as shown with circles.…”

Section: A Performance Review Of Widely-tunable Semiconductor Lasersmentioning

confidence: 99%

“…Such approaches are naturally more scalable if modified complementary metal oxide semiconductor (CMOS) processes are used, and such lasers can be integrated with many other components on a single chip to realize advanced photonic integrated circuits, e.g., fully-integrated beam steerers [2], microwave signal generators, and tracking generators [47]. A laser providing 57 nm of tuning, >45 dB SMSR, and a (integrated) linewidth below 100 kHz in full tuning range, with best results down to 50 kHz and 10 dBm output power (without booster SOA), has been demonstrated [49].…”

Section: A Performance Review Of Widely-tunable Semiconductor Lasersmentioning

confidence: 99%

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Widely-Tunable Ring-Resonator Semiconductor Lasers

et al. 2017

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Chip-scale widely-tunable lasers are important for both communication and sensing applications. They have a number of advantages, such as size, weight, and cost compared to mechanically tuned counterparts. Furthermore, they allow for integration in more complex integrated photonic chips to realize added functionality. Here we give an extensive overview of such lasers realized by utilizing ring resonators inside the laser cavity. Use of ring resonators for tuning allows for wide-tunability by exploiting the Vernier effect, and at the same time improves the laser linewidth, as effective cavity length is increased at ring resonance. In this review, we briefly introduce basic concepts of laser tuning using ring resonators. Then, we study a number of laser cavity configurations that utilize two ring resonators, and compare their tuning performance. We introduce a third ring resonator to the laser cavity, study three different cavity configurations utilizing three ring resonators, and select the optimal one, for which we show that laser tuning is straightforward, provided there are monitor photodetectors on-chip. Finally, we give a literature overview showing superior linewidth performance of ring-based widely-tunable lasers.

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Section: A Performance Review Of Widely-tunable Semiconductor Lasersmentioning

confidence: 99%

Section: A Performance Review Of Widely-tunable Semiconductor Lasersmentioning

confidence: 99%

Widely-Tunable Ring-Resonator Semiconductor Lasers

et al. 2017

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“…ULN is a key requirement to any system involving optical mixing, because the noise of the laser will directly affect the fidelity of the generated RF signals. For example, two ULN lasers can be beat together in a high-speed photodetector to generate a stable microwave signal [9,10]. Another major use of ULN lasers requiring extremely low-phase noise is in the fiber optic sensing field, such as interferometric acoustic-sensing systems for exploration or sonar sensing systems or distributed sensing systems.…”

Section: Introductionmentioning

confidence: 99%

High-power sub-kHz linewidth lasers fully integrated on silicon

Huang

Tran

Guo

et al. 2019

Optica

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We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1 kHz linewidth and over 37 mW output power, as well as a ring-assisted DBR laser with less than 500 Hz linewidth. The extended DBR lasers are fabricated by heterogeneously integrating III-V material on Si as a gain section plus a 15 mm long, low-kappa Bragg grating reflector in an ultralow-loss silicon waveguide. The low waveguide loss (0.16 dB/cm) and long Bragg grating with narrow bandwidth (2.9 GHz) are essential to reducing the laser linewidth while maintaining high output power and single-mode operation. The combination of narrow linewidth and high power enable its use in coherent communications, RF photonics, and optical sensing.

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“…The MZM would be realized in a different aforementioned layer stack. The bonding of different III-V materials on the same passive Si PIC has been demonstrated before [11]. After PIC processing, the PIC would be placed on a PCB to create a RF and LO input port, as well as an input for the MLL reference to lock the repetition rate.…”

Section: Towards a Fully Integrated Epfcmentioning

confidence: 99%

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

et al. 2017

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Abstract:In this work we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we turn to the use of photonic integrated devices. In the demonstrations five channels in the Ka-band (27.5 GHz to 30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of -20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a conversion gain can be obtained on a millimeter-sized photonic integrated circuit. AbstractIn this work we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we turn to the use of photonic integrated devices. In the demonstrations five channels in the Ka-band (27.5 GHz to 30 GHz) with 500 MHz bandwidth are downconverted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of -20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

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Fully integrated microwave frequency synthesizer on heterogeneous silicon-III/V

Cited by 60 publications

References 17 publications

Widely-Tunable Ring-Resonator Semiconductor Lasers

Widely-Tunable Ring-Resonator Semiconductor Lasers

High-power sub-kHz linewidth lasers fully integrated on silicon

Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

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