Fully Integrated Millimeter-Wave VCO with 32% Tuning Range

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Kaynak

Purtova

et al. 2012

Self Cite

Abstract-This paper presents a dual-band millimeterwave VCO utilizing RF-MEMS switches fully integrated into a standard BiCMOS process. The switch and associated transmission line form a reconfigurable inductor in the VCO core. Depending on the state of the switch, the VCO frequency can be tuned either from 48 to 52 GHz, or from 64 to 72 GHz. The VCO provides both fundamental and frequencydivided (divide by 64) outputs, with integrated frequency dividers. The fundamental output power is 4/5 dBm and the phase noise at 1 MHz offset is -84/-86 dBc/Hz for the lower/upper bands. To the authors' knowledge, this is the first millimeter-wave, dual-band VCO with fully integrated RF-MEMS switches.

Section: Circuit Design and Simulationmentioning

confidence: 99%

Dual-band millimeter-wave VCO with embedded RF-MEMS switch module in BiCMOS technology

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Kaynak

Purtova

et al. 2012

Self Cite

“…The phase noise at 1 MHz offset is -84 dBc/Hz, compared to -88 dBc/Hz in simulation. The deviation may result from the noise induced by the tuning voltage supply [4]. Figure 7 shows the single-ended output power with the losses.…”

Section: B Measurementmentioning

confidence: 99%

“…The phase noise of the VCO was also measured using the Phase Noise Utility of the Agilent 8565EC, which is a built-in software specialized to measure the phase noise of an oscillator at different offset frequencies or to continuously measure the phase noise at one spot offset frequency [4]. It was measured from 500 kHz to 100 MHz.…”

Section: B Measurementmentioning

confidence: 99%

U- and V-band signal sources in Si/SiGe technology

2011 Semiconductor Conference Dresden

Trasser

et al. 2011

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Abstract-A U-band VCO and a V-band push-push frequency doubler are designed in a 0.25 µm SiGe:C BiCMOS technology. The VCO oscillates from 48 GHz to 55 GHz, with an output power of around -1 dBm and a phase noise of -84 dBc/Hz at 1 MHz offset. The push-push frequency doubler has a minimum loss of 12 dB at 50 GHz for an input power of 6 dBm. It achieves an output power of -2.4 dBm at 50 GHz and -5.8 dBm at 75 GHz for an input power of 10 dBm. The VCO is biased at 4 V consuming 36 mA, and the push-push doubler draws 9.4 mA from a 2 V supply.

“…The output power can be improved through a tuning network at the output, but only for a narrow bandwidth [3]. We have reported a wide band VCO [4], combined with a frequency doubler for wide band signal generation at frequencies close to [5]. But the output power is low when a simultaneous fundamental output is taken from the VCO.…”

Section: Introductionmentioning

confidence: 99%

33–43 GHz and 66–86 GHz VCO With High Output Power in an 80 GHz <formula formulatype="inline"><tex Notation="TeX">${\rm f}_{\rm T}$</tex></formula> SiGe HBT Technology

IEEE Microw. Wireless Compon. Lett.

Trasser

Schumacher

2010

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This letter presents a signal generation circuit that combines a wide tuning range voltage controlled oscillator (VCO) and a frequency doubler. The VCO provides two differential outputs with different power levels. A push-push frequency doubler is designed and cascaded to the high power output of the VCO, while the low power output is reserved to drive a frequency divider in a PLL. The VCO can be tuned from 33 to 43 GHz, with around 0 dBm output power at the low power output. Simultaneously, signal generation from 66 to 86 GHz is achieved at the doubler output, with a maximum output power of 1.1 dBm at 74 GHz ( 2.5 dBm at 81 GHz). The measured phase noise at the VCO output and the doubler output are 91 dBc/Hz and 83 dBc/Hz at 1 MHz offset ( 112 dBc/Hz and 106 dBc/Hz at 10 MHz offset), respectively. The circuit is realized in a 0.8 m SiGe heterojunction bipolar transistor process, with f T f max of 80/90 GHz. The VCO consumes 81 mA current while the doubler consumes an extra 17 mA from a 4 V supply. The circuit demonstrates the possibility of wide-band signal generation up to f max with sufficient output power (e.g. to drive a mixer) in a conservatively scaled, low-cost process.