Fully-monolithic, 600&amp;#x00B0;C differential amplifiers in 6H-SiC JFET IC technology

Patil, Amita; Fu, Xiao‐An; Mehregany, Mehran; Garverick, S.L.

doi:10.1109/cicc.2009.5280889

Cited by 33 publications

(23 citation statements)

References 4 publications

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“…Finally, a comparison of high temperature opamps is provided in Table II. Higher gain bandwidth was achieved compared to [8] due to inherently higher speed of bipolar devices.…”

Section: Resultsmentioning

confidence: 94%

“…High temperature opamps have been demonstrated using SiC MOSFETs and JFETs [6][7][8]. SiC MOSFET ICs suffer from reliability issues of the gate oxide at elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…In [7] an opamp based on discrete SiC JFET devices was fabricated and characterized only at room temperature. In [8] an integrated opamp in SiC JFET was fabricated and characterized up to 576°C; however, BJTs have higher speed and better linearity and driving capability compared to JFETs. This paper reports on performance of a monolithic twostage opamp with negative feedback, fabricated in a 4H-SiC bipolar technology, over a wide temperature range.…”

Section: Introductionmentioning

confidence: 99%

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A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Hedayati,

Lanni,

Rodriguez

et al. 2014

IEEE Electron Device Lett.

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A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology. © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. IEEE Electron Device Letters Permanent link to this version:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-148621 > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1Abstract-A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25°C to 500°C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3dB bandwidth increases from 270 kHz at 25°C to 410 kHz at 500°C. The opamp achieves 1.46 V/µs slew rate and 0.25% Total Harmonic Distortion (THD). This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits (ICs).

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“…Finally, a comparison of high temperature opamps is provided in Table II. Higher gain bandwidth was achieved compared to [8] due to inherently higher speed of bipolar devices.…”

Section: Resultsmentioning

confidence: 94%

“…High temperature opamps have been demonstrated using SiC MOSFETs and JFETs [6][7][8]. SiC MOSFET ICs suffer from reliability issues of the gate oxide at elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Hedayati,

Lanni,

Rodriguez

et al. 2014

IEEE Electron Device Lett.

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“…High-temperature MOSFET SiC amplifiers have been demonstrated in [7]- [10], in which the maximum operation temperature is 500 °C [10]. On the other hand, JFET SiC amplifiers can operate stably at ambient temperature up to 576 °C [11], [12] by eliminating gate oxide. Compared to JFETs, BJTs are potentially better for high-precision (lower offset/noise) and high-speed analog integrated circuits (ICs) (larger g m /I C ), as discussed in [13].…”

Section: Introductionmentioning

confidence: 99%

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Tian

Lanni

Rusu

2016

IEEE Trans. Electron Devices

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Abstract-This paper presents a monolithic fully-differential amplifier implemented in a low-voltage 4H-SiC BJT technology. The circuit has been designed considering the variation of device parameters over a large temperature range. A base-current compensation technique has been applied to overcome the low input-resistance of the amplifier. The bare chip of the amplifier has been measured from 27 ºC to 500 ºC using a hot-chuck probe station. Its open-loop gain is 58 dB at 27 ºC, and monotonically decreases to 37 dB at 500 ºC. Its closed-loop gain reduction is around 5 dB over the investigated temperature range. The gain-bandwidth product drops from 2.8 MHz at 27 ºC to 1.3 MHz at 500 ºC with 470 pF off-chip compensation capacitors. A low total-harmonic-distortion of -58.4 dB at 27 ºC and -46.9 dB at 500 ºC is achieved due to the fully-differential implementation. A low input offset voltage of 0.5 mV at 27 ºC and 6.9 mV at 500 ºC is achieved without calibration. The relative high linearity and low offset demonstrate the potential of this technology to be further investigated for front-end sensor circuits in high-temperature applications.

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“…Therefore, much research has been conducted in SiC electronics for elevated temperatures. High-temperature integrated digital logic circuits [1], operational amplifiers [2], [3], and Schmitt triggers [4] are a few examples.…”

mentioning

confidence: 99%