Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors

Abstract

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A low-noise single-photon detector implemented in a 130nm CMOS imaging process

“…The novel SPAD structure presented in this paper was implemented in a dedicated 130 nm imaging CMOS process [16]. The core of the SPAD consists of a planar p-n junction biased above breakdown, thus operating in Geiger mode.…”

Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

“…12 The pixel architecture is a 4T-type pinned photodiode with 1.75 equivalent shared transistors per pixel. Several doses of metallic contamination were introduced using ion implantation through the sacrificial oxide grown before the gate stack was processed.…”

X-ray radiation effect on CMOS imagers with in-pixel buried-channel source follower

“…During the past few years, research has revealed that the random noise in CMOS imagers is mainly composed out of 1/f and the so-called Random Telegraph Signal (RTS) noise [3]. The dominant noise sources in CMOS image sensors (CIS) are due to the lattice defects at Si-SiO 2 interface of the in-pixel source follower (SF) transistor [4,5].…”