Functionalized silicon substrates with stripe-patterned surface-near electrostatic forces for the self-organized, stable immobilization of biomolecules

Blaschke, Daniel; Pahlow, Susanne; Fremberg, T.; Weber, Karina; Müller, A.-D.; Kurz, Susanne; Spohn, Juliane; Dhandapani, V.; Rebohle, L.; Skorupa, Ilona; Schmidt, Heidemarie

doi:10.1016/j.apsusc.2020.148729

Cited by 5 publications

(5 citation statements)

References 28 publications

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“…As we have reported in our previous work [12], these electrostatic forces can be used for the self-organized local immobilization of charged biomolecules. We controlled the surface charge pattern by a local implantation of phosphorus and boron ions into p-and n-type silicon wafers, respectively.…”

Section: Introductionmentioning

confidence: 75%

“…The simulation of the ion range and the displacement of silicon target atoms was performed using SRIM-2013.00 in the "Detailed Calculation with full Damage Cascades" mode. The energy of the implanted silicon ions was set to 970 keV to obtain a similar depth profile as by the implantation of 1 MeV phosphorus ions, which we used in our previous publication [12]. The angle of incidence was set to 7˚ tilt and 22˚ twist during ion implantation to prevent ion channeling.…”

Section: Ion Implantation and Simulationmentioning

confidence: 99%

“…were N is the doping concentration of the semiconductor which equals the free carrier concentration if all dopants are ionized. This derivation is explained in more detail in [12].…”

Section: Calculation Of Fermi Energymentioning

confidence: 99%

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Local Tuning of the Surface Potential in Silicon Carriers by Ion Beam Induced Intrinsic Defects

Blaschke¹,

Rebohle²,

Skorupa³

et al. 2022

AMPC

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The immobilization of biomaterials on a carrier is the first step for many different applications in life science and medicine. The usage of surface-near electrostatic forces is one possible approach to guide the charged biomaterials to a specific location on the carrier. In this study, we investigate the effect of intrinsic defects on the surface potential of silicon carriers in the dark and under illumination by means of Kelvin probe force microscopy. The intrinsic defects were introduced into the carrier by local, stripe-patterned ion implantation of silicon ions with a fluence of 3 × 10 13 Si ions/cm 2 and 3 × 10 15 Si ions/cm 2 into a p-type silicon wafer with a dopant concentration of 9 × 10 15 B/cm 3 . The patterned implantation allows a direct comparison between the surface potential of the silicon host against the surface potential of implanted stripes. The depth of the implanted silicon ions in the target and the concentration of displaced silicon atoms was simulated using the Stopping and Range of Ions in Matter (SRIM) software. The low fluence implantation shows a negligible effect on the measured Kelvin bias in the dark, whereas the large fluence implantation leads to an increased Kelvin bias, i.e. to a smaller surface work function according to the contact potential difference model. Illumination causes a reduced surface band bending and surface potential in the non-implanted regions. The change of the Kelvin bias in the implanted regions under illumination provides insight into the mobility and lifetime of photo-generated electron-hole pairs. Finally, the effect of annealing on the intrinsic defect density is discussed and compared with atomic force microscopy measurements on the 2 nd harmonic. In addition, by using the Baumgart, Helm, Schmidt interpretation of the measured Kelvin bias, the dopant concentration after implantation is estimated.

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Section: Introductionmentioning

confidence: 75%

Section: Ion Implantation and Simulationmentioning

confidence: 99%

See 1 more Smart Citation

Local Tuning of the Surface Potential in Silicon Carriers by Ion Beam Induced Intrinsic Defects

Blaschke¹,

Rebohle²,

Skorupa³

et al. 2022

AMPC

View full text Add to dashboard Cite

show abstract

“…This work provided a promising platform for multi-spot and label-free DNA chips. Blaschke et al [ 12 ] prepared silicon substrates with stripe-patterned surface-near electrostatic forces (SNEF) by local implantation of boron ions into n-type silicon wafers and phosphorus ions into p-type silicon wafers in a stripe pattern of 12 μm periodicity. The negatively charged single stranded deoxyribonucleic acid (ssDNA) and bovine serum albumin (BSA) proteins were immobilized on silicon regions.…”

Section: Introductionmentioning

confidence: 99%

Connection of ssDNA to Silicon Substrate Based on a Mechano–Chemical Method

et al. 2023

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A novel fabrication process to connect single-stranded DNA (ssDNA)to a silicon substrate based on a mechano–chemical method is proposed. In this method, the single crystal silicon substrate was mechanically scribed in a diazonium solution of benzoic acid using a diamond tip which formed silicon free radicals. These combined covalently with organic molecules of diazonium benzoic acid contained in the solution to form self-assembled films (SAMs). The SAMs were characterized and analyzed by AFM, X-ray photoelectron spectroscopy and infrared spectroscopy. The results showed that the self-assembled films were covalently connected to the silicon substrate by Si–C. In this way, a nano-level benzoic acid coupling layer was self-assembled on the scribed area of the silicon substrate. The ssDNA was further covalently connected to the silicon surface by the coupling layer. Fluorescence microscopy showed that ssDNA had been connected, and the influence of ssDNA concentration on the fixation effect was studied. The fluorescence brightness gradually increased with the gradual increase in ssDNA concentration from 5μmol/L to 15μmol/L, indicating that the fixed amount of ssDNA increased. However, when the concentration of ssDNA increased from 15μmol/L to 20μmol/L, the detected fluorescence brightness decreased, indicating that the hybridization amount decreased. The reason may be related to the spatial arrangement of DNA and the electrostatic repulsion between DNA molecules. It was also found that ssDNA junctions on the silicon surface were not very uniform, which was related to many factors, such as the inhomogeneity of the self-assembled coupling layer, the multi-step experimental operation and the pH value of the fixation solution.

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“…The ability to realize smooth dielectric and charge density patterns by low‐temperature (LT) ALD in combination with lithographic techniques, provides an intriguing possibility for creating carrier‐selective contacts in Si solar cells and local gate structures in advanced transistors, as well as for spatially‐defined surface functionalization [ 11 ] of relevance for area‐selective deposition [ 12 ] and chemical sensing. [ 13 ]…”

Section: Introductionmentioning

confidence: 99%

Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina

Henning

Bartl

Wolz

et al. 2022

Adv Materials Inter

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Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on scalable processes for interface manipulation of structured surfaces on the atomic level. While ALD allows the synthesis of conformal films with utmost control over the thickness, atomically‐defined closed coatings and surface modifications are challenging to achieve because of 3D growth during nucleation. Here, a route is presented toward the sub‐nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon substrates for the spatial control of the surface charge density and interface energetics. Trimethylaluminum in combination with remote hydrogen plasma is used instead of a gas‐phase oxidant for the transformation of silicon dioxide (SiO2) into alumina. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which is exploited to deposit ultrathin AlOx layers in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing 0.3 nm step heights and surface potential steps exceeding 0.4 V. In addition, the introduction of fixed negative charges of 9 × 1012 cm−2 enables modulation of the surface band bending, which is relevant to the field‐effect passivation of silicon and low‐impedance charge transfer across contact interfaces.

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Functionalized silicon substrates with stripe-patterned surface-near electrostatic forces for the self-organized, stable immobilization of biomolecules

Cited by 5 publications

References 28 publications

Local Tuning of the Surface Potential in Silicon Carriers by Ion Beam Induced Intrinsic Defects

Local Tuning of the Surface Potential in Silicon Carriers by Ion Beam Induced Intrinsic Defects

Connection of ssDNA to Silicon Substrate Based on a Mechano–Chemical Method

Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina

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