Functions classification approach to generate reconfigurable fine-grain logic based on Ambipolar Independent Double Gate FET (Am-IDGFET)

Jabeur, Kotb; O’Connor, Ian; Yakymets, Nataliya

doi:10.1016/j.mejo.2013.09.001

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…[14][15][16] Additionally, without complex designs involving different n-and p-type unipolar transistors, ambipolar logic circuits (or CMOS-like logic circuits) consisting of identical ambipolar CNT transistors have recently received considerable attention for other methods of efficiently fabricating logic circuits. [17][18][19][20] Ambipolar transistors allow both electrons and holes to be injected and transported depending on the bias conditions in a single device. One of the significant advantages of using ambipolar transistors in logic circuits is ease of fabrication, as a single type of transistor can be used rather than spatially complicated patterned and designed unipolar p-and n-type transistors.…”

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confidence: 99%

Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine

Yoon

Choi

Kim

et al. 2016

Applied Physics Letters

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We demonstrate an ink-jet printed ambipolar transistor and inverter based on a semiconducting carbon nanotube (CNT) network as a channel by employing a solution-based chemical doping technique with an amine-rich polyethyleneimine (PEI) polymer. The PEI polymer has been reported as an efficient electron dopant and thus contributes to enhancing n-type conduction in CNT transistors. However, because of the presence of ambient oxygen and moisture and the hygroscopicity of the PEI polymer, their p-type conduction did not seem to be effectively reduced, resulting in rather ambipolar conduction. Therefore, we utilize a simple solution-based doping technique to convert ptype semiconducting CNT transistors into ambipolar transistors and fabricate the ambipolar CNT transistor by combining a cost-effective ink-jet printing technique and a simple spin-coating method. Finally, the electrical performance of the logic inverter consisting of identical two ambipolar CNT transistors is also evaluated and optimized by adjusting the concentration of PEI polymer.

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confidence: 99%

Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine

Yoon

Choi

Kim

et al. 2016

Applied Physics Letters

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“…Second, ambipolar transistors offer more circuit design options that can be advantageous in terms of area, power, and speed. [6][7][8] So far, a variety of ambipolar SWNT transistor-based circuits, such as ring oscillators [9][10][11] and RF circuits, 12,13 have been demonstrated, verifying their practical feasibility.…”

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confidence: 99%

Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C60 and fabrication of logic gates

Park

Nam

Koo

et al. 2015

Applied Physics Letters

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We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C60 on top. The addition of C60 was observed to have two effects in enhancing ambipolar characteristics. First, C60 served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C60 itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C60 ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.

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Modeling and Characterization of the Metal Contact and the Channel in a Graphene Device

Hossain

Chowdhury

2019

Handbook of Graphene

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Functions classification approach to generate reconfigurable fine-grain logic based on Ambipolar Independent Double Gate FET (Am-IDGFET)

Cited by 4 publications

References 32 publications

Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine

Ink-jet printed semiconducting carbon nanotube ambipolar transistors and inverters with chemical doping technique using polyethyleneimine

Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C60 and fabrication of logic gates

Modeling and Characterization of the Metal Contact and the Channel in a Graphene Device

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