Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics

Sangwan, Vinod K.; Ortiz, Rocío Ponce; Alaboson, Justice M. P.; Emery, Jonathan D.; Bedzyk, Michael J.; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

doi:10.1021/nn302768h

Cited by 145 publications

(192 citation statements)

References 44 publications

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“…1 C, I). The SL-MoS 2 FET is electrically isolated by patterning 30-nm alumina via atomic layer deposition (ALD) followed by transfer and patterning of a sorted s-SWCNT thin film (23,24) (Fig. 1 C, II) to yield the final device ( Fig.…”

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confidence: 99%

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode

Jariwala

Sangwan

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

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387

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The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance fieldeffect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10 4 . This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, highperformance electronics and optoelectronics.2D transition metal dichalcogenide | single layer MoS 2 | van der Waals heterostructure | rectifier | photodetector

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confidence: 99%

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode

Jariwala

Sangwan

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

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387

343

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“…On the other hand, carbon nanotube network thin film has emerged as a potential building block for macroelectronics such as backpanel organic light-emitting diode pixel-driving circuits for active-matrix flat-panel displays 17,18 , digital circuits [19][20][21][22][23][24][25][26][27] , radio frequency identification tags 28 , sensors [29][30][31] and memories 32 . CNT network TFTs exhibit the merits of high transparency, high flexibility, low process cost, low processing temperature and high scalability, while traditional TFT materials such as amorphous silicon and polycrystalline silicon are usually not transparent, have poor flexibility, require high processing cost and use high processing temperature 20,23,[33][34][35][36][37][38][39] . However, semiconducting CNTs are usually p-type semiconducting materials in atmosphere due to adsorption of oxygen [40][41][42] , and techniques to convert CNTs to n-type semiconductors 22,41,[43][44][45][46][47][48][49] still require further development to achieve long-term stability (for example, over multiple years), and sometimes bear significant device-todevice variation 22,46,49 .…”

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confidence: 99%

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

et al. 2014

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Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-galliumzinc-oxide thin-film transistors to achieve large-scale (41,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

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“…Carbon nanotube (CNT) assemblies have excellent mechanical flexibility and stretchability as well as electric conductivity and heat tolerance. They have been used in various electronic and electromechanical devices, including flexible transparent conductive films [3][4][5] , thin-film transistors (TFTs) [6][7][8][9][10] , functional ICs 8,9,11 and electromechanical sensors 12 . Currently available carbon-based devices such as TFTs [13][14][15][16] usually exhibit limited flexibility and stretchability owing to the use of rigid metal electrodes and oxide insulators (such as Al 2 O 3 and SiO 2 , to name a few).…”

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confidence: 99%

Mouldable all-carbon integrated circuits

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Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics

Abstract: ABSTRACT:In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In

Cited by 145 publications

References 44 publications

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

Mouldable all-carbon integrated circuits

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Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics

Abstract: ABSTRACT:In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In

Cited by 145 publications

References 44 publications

Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode

Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

Mouldable all-carbon integrated circuits

Contact Info

Product

Resources

About

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode

Gate-tunable carbon nanotube–MoS ₂ heterojunction p-n diode