Fundamental Study on the Selective Etching of Al0.25Ga0.75As Versus GaAs in Acidic Iodine Solutions

Verpoort, Philippe; Vermeir, Inge; Gomes, W. P.

doi:10.1149/1.2050028

Cited by 11 publications

(3 citation statements)

References 5 publications

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“…Instead the quantum efficiency for reduction of the oxidizing agent decreases from 2 to 1, before water begins to be reduced. 18 The reduction of IO 3in alkaline 18 and acidic 25 solutions is, in this respect, even more striking. At low light intensity a quantum efficiency close to 6 is observed, which drops to 1 as the photon flux is increased.…”

Section: Discussionmentioning

confidence: 84%

Reduction of Peroxodisulfate at Porous and Crystalline Silicon Electrodes: An Anomaly

1996

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Electroluminescence from n-type porous silicon can be generated in solution by reduction of peroxodisulfate. It has been assumed that the SO 4•-radical ion, formed in the first reduction step, injects a hole into the valence band of the porous semiconductor. The hole should subsequently undergo radiative recombination with a conduction band electron. Using two techniques, viz., photocurrent quantum efficiency measurements with p-type porous and crystalline silicon electrodes and minority carrier injection studies with the "transistor technique", we found that the reduction of peroxodisulfate is, however, not always accompanied by hole injection. The silicon results are compared with results obtained on GaAs electrodes.

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Section: Discussionmentioning

confidence: 84%

Reduction of Peroxodisulfate at Porous and Crystalline Silicon Electrodes: An Anomaly

1996

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“…This strategy has been successfully applied previously to study the etching behavior of binary III-V semiconductors 10 and of the ternary materials Al 0.25 Ga 0.75 As and In 0.53 Ga 0.47 As. 11,12 In Ref. 11, it was demonstrated that the observed etching selectivity of Al 0.25 Ga 0.75 As vs. GaAs in acidic (I 2 ϩ I Ϫ )-containing solutions is essentially due to a difference in etching mechanism.…”

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confidence: 99%

On the Selective Etching of In0.53Ga0.47As and In0.72Ga0.28As0.61 P 0.39 vs. InP in Alkaline K 3Fe ( CN ) 6 Solutions: An Electrochemical Study

Theuwis

Vermeir

1999

J. Electrochem. Soc.

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To get insight into the selective etching of In0.53Ga0.47normalAs and In0.72Ga0.28As0.61P0.39 with respect to InP in alkaline K3normalFefalse(CN)6‐ containing solutions, the electrochemical and etching properties of In0.53Ga0.47normalAs and In0.72Ga0.28As0.61P0.39 were studied by rotating (ring)‐disk voltammetry and by electrical impedance and etch rate measurements. It is shown that both In0.53Ga0.47normalAs and In0.72Ga0.28As0.61P0.39 are etched by K3normalFefalse(CN)6 in an electroless etching process, in which holes are injected by K3normalFefalse(CN)6 and consumed in the anodic dissolution. The observed selectivity in the etching of In0.53Ga0.47normalAs and In0.72Ga0.28As0.61P0.39 vs. InP is due to a difference in valence band‐edge position, which determines the hole injection rate. Furthermore, it was found that a mechanism of galvanic element formation enhances the selectivity when InP and In0.53Ga0.47normalAs or InP and In0.72Ga0.28As0.61P0.39 are in electrical contact. © 1999 The Electrochemical Society. All rights reserved.

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“…This can be explained as follows. The diffusion limit of the etch rate ra is given by an expression of the type = kdc [13] with c the concentration of the etching reactant in solution and lc a proportionality constant which only depends on solution properties. For the rate of the actual surface reaction r,, an expression r, = k,c" [14] is assumed, with k, the rate constant and with 0 c a c 1.…”

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confidence: 99%

The Etching of InP by Acidic Iodine Solutions: A Kinetic and Electrochemical Study

Vermeir

Gomes

1996

J. Electrochem. Soc.

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The etch rate of monocrystalline p-and n-InP in acidic I + 1 solutions was measured as a function of several variables, using a flow cell setup. Electrochemical measurements were performed in darkness and under illumination. Both cathodically for p-type and anodically for n-type, enhancement of the limiting photocurrent was observed when adding iodine to the indifferent electrolyte solution. From combined etch rate and electrochemical data, the stoichiometry of the surface etch reaction was deduced, and it was established that a sequential chemical etching mechanism operates. It was shown that interaction occurs between chemical etching of the semiconductor by iodine and anodic dissolution when holes are available at the surface. The etch rate of the (111) face was found to be lower than that of the (11 1) and ( 100) faces. In most cases, the kinetics of the etching reaction were clearly correlated to the resulting morphology and to the shape of the etching profiles at mask edges.

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Fundamental Study on the Selective Etching of Al0.25Ga0.75As Versus GaAs in Acidic Iodine Solutions

Cited by 11 publications

References 5 publications

Reduction of Peroxodisulfate at Porous and Crystalline Silicon Electrodes: An Anomaly

Reduction of Peroxodisulfate at Porous and Crystalline Silicon Electrodes: An Anomaly

On the Selective Etching of In0.53Ga0.47As and In0.72Ga0.28As0.61 P 0.39 vs. InP in Alkaline K 3Fe ( CN ) 6 Solutions: An Electrochemical Study

The Etching of InP by Acidic Iodine Solutions: A Kinetic and Electrochemical Study

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