Spectral signatures of Cr(iii) complexes in deep eutectic mixtures were remarkably different from aqueous solutions due to exchange of the water ligands with ethylene glycol.

A sustainable Cr(iii) electrolyte was brought one step closer to industrial application by in-depth understanding of the (coordination) chemistry.

To get insight into the selective etching of Al0.25Ga0.75normalAs with respect to normalGaAs in acidic I2+I− containing solutions, etch rate measurements on the (100)‐face of both materials were performed as a function of several variables. By combining these results with those of electrochemical measurements (including rotating disk electrode (RDE) and rotating ring‐disk electrode (RRDE) techniques), it was established that at Al0.25Ga0.75normalAs an electroless etching mechanism operates, whereas at normalGaAs dissolution occurs by chemical etching. The observed selectivity in solutions with I2 concentrations above 0.01 mol · liter−1 is essentially due to this difference in etching mechanism, which determines the concentration dependence of the etch rate as well as the influence of surface oxide layers on these rates.

No abstract

All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of Trans Tech Publications Ltd, www.scientific.net.