Fusion bonding of Si wafers investigated by x ray diffraction

Weichel, S.; Grey, François; Rasmussen, Kjeld; Nielsen, M.; Feidenhans’l, R.; Howes, P.B.; Vedde, Jan

doi:10.1063/1.125659

Cited by 8 publications

(5 citation statements)

References 13 publications

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“…In other words, the bonding interface can be considered as silicon with some small pores distributed in the interfacial plane. These results are in agreement with the observation of the chemical changes reported in the literature between 500˚C and 700˚C [1], and with the creation of the dislocation networks at about T = 800˚C [9]. The evolution of the bonding interface thickness was also calculated.…”

Section: Temperature Investigationsupporting

confidence: 90%

Buried hydrophobic silicon bonding studied by high-energy x-ray reflectivity

Buttard¹,

Rieutord²,

Eymery³

et al. 2003

J. Phys. D: Appl. Phys.

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The non-conventional technique of high-energy x-ray reflectivity is used to investigate buried Si|Si interface obtained by hydrophobic wafer bonding. In this experiment the well-collimated beam is transmitted through the sample and is reflected by the bonding interface described by its density and width. Transmission x-ray reflectivity curves are fitted using this two-parameter model with a Gaussian or exponential profile to analyse the evolution of the bonding interface as a function of temperature from 250°C to 1100°C.

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Section: Temperature Investigationsupporting

confidence: 90%

Buried hydrophobic silicon bonding studied by high-energy x-ray reflectivity

Buttard¹,

Rieutord²,

Eymery³

et al. 2003

J. Phys. D: Appl. Phys.

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“…Previous measurements have been dedicated to thick twistbonded samples 12,13 to study the periodic elastic modulation in two 350 m thick crystals. In this two infinite media geometry, the amplitude of the modulation of atomic position decays exponentially with distance from the interface, and the characteristic thickness has been found to be inversely proportional to the twist angle.…”

Section: Introductionmentioning

confidence: 99%

Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction

et al. 2002

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An ultrathin silicon layer (16 nm) bonded onto a silicon wafer is studied by grazing incidence x-ray diffraction. We measure satellite peaks around the {220} reflections coming from two periodic dislocation networks localized at the bonding interface. These lateral superlattice peaks are explained with a simple continuum model, and their positions give information about the tilt and twist misalignment of the two crystals, as well as the nature and interactions between the dislocation arrays. The square symmetry of dissociated screw dislocations (twist) and the average alignment of the mixed dislocations (tilt) are observed. The analysis of the satellite truncation rods shows that the strain field is strong enough to affect the surface, and that the dissociation of screw dislocations has to be taken into account

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“…8 X-ray scattering measurements of the strain field in thick bonded wafers with different twist angles twist have been reported previously. 1,9 These measurements were later extended to cover twist from 0.2°to 25°. We found that the thickness of the strained interface is about 0.8 nm for twist Ͼ8°but for smaller angles the thickness is inversely proportional to twist , and for a twist angle of 0.2°, the thickness exceeds 30 nm.…”

mentioning

confidence: 99%

“…The wafer was hydrophobically bonded to a standard Si wafer with a well-defined twist angle twist . 4 After annealing at 1000°C, 9 the SOI bulk crystal and SiO 2 layer were etched away leaving the thin top crystal bonded to the standard wafer.…”

mentioning

confidence: 99%