Ga
                N
                ∕
                In
                Ga
                N
           light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

David, Aurélien; Moran, B.; McGroddy, Kelly; Matioli, Elison; Hu, Evelyn L.; DenBaars, Steven P.; Nakamura, Shuji; Weisbuch, C.

doi:10.1063/1.2898513

Cited by 47 publications

(34 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7. The PhC diffraction of guided modes and the Fabry-Perot modes are clearly observed however, these effects are much weaker than in other PhCbased LEDs measurements [2,5,6,7]. The reason for the poor diffraction becomes clear when we analyze the cross-section TEM image of the LED shown in Fig.…”

Section: Embedded Phc Ledsmentioning

confidence: 69%

See 1 more Smart Citation

GaN‐based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization

Matioli

Iza

Choi

et al. 2009

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

We present the numerical optimization of GaN‐based embedded 2D‐Photonic Crystal (PhC) LEDs based on a full 3D scattering matrix model pointing out the importance of a proper vertical design in embedded PhC structures. The growth of such structures following the numerical simulation trends is shown to be feasible. Experimental results of a bright embedded 2D‐PhC LED (9mW at 20mA) under electrical injection are reported. Angular measurements are performed to understand the efficiency in light extraction of the PhCs and the mechanisms limiting its full potential are presented. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Embedded Phc Ledsmentioning

confidence: 69%

“…3 Growth of embedded 2D-PhC structures Embedded 1D-PhC LEDs have already been demonstrated [7] where the PhC diffraction of guided modes has been clear- Contributed Article ly seen. However the diffraction occurs only in the direction perpendicular to the stripes of the 1D-PhCs.…”

Section: Embedded Phc Ledsmentioning

confidence: 98%

GaN‐based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization

Matioli

Iza

Choi

et al. 2009

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

show abstract

“…The greater interaction of the guided light with the embedded PhCs not only allows extraction of the low order modes but also improves the extraction of high order modes, compared to surface PhCs. 8 In addition, the high refractive index contrast between GaN and air in these air-gap structures yields an enhanced PhC diffraction strength, compared to embedded dielectric-based gratings, 9 and the two-dimensional ͑2D͒ nature of the PhC results in omnidirectional light extraction. Furthermore, the planar top surface of the embedded PhC LED simplifies device fabrication, and, in particular, eases issues related to making the best electrical contacts to the device.…”

mentioning

confidence: 99%

High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals

et al. 2010

Self Cite

View full text Add to dashboard Cite

show abstract

“…In this section, the work of David et al [34] and Matioli et al [19], [35], [36], with embedded PhCs, which to some extent can be regarded as another kind of low-index confining layer, was applied in the simulation. The LED structure with only embedded PhCs l [as shown in Fig.…”

Section: Enhancing Lee By Embedded Phcsmentioning

confidence: 99%

Improving Light Extraction Efficiency of GaN-Based LEDs by Al$_{\bm x}$Ga$_{{\bf 1}{\bm -}{\bm x}}$N Confining Layer and Embedded Photonic Crystals

Gao

Kong

et al. 2012

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

The interaction of low-order modes with photonic crystals (PhCs) has been a promising technique to increase light extraction efficiency (LEE) of LEDs. In this paper, numerical simulations based on the finite-difference time-domain method were carried out to explore different mechanisms that can effectively improve this interaction. The results showed that deeply etched PhCs have inefficient light extraction since they would decrease the effective thickness of the unetched layer and cut off some guided modes. By applying the Al x Ga 1 −x N confining layer, the distribution of guided modes was changed. The cap layer mode was isolated from the GaN buffer, and larger LEE was achieved. Furthermore, dramatic increments with oscillations were found in the LEE by using embedded PhCs. Resonances of the Bloch mode localized within these PhCs, which caused the oscillations, were further modified by a shallow Al x Ga 1 −x N confining layer. With the optimized parameters, over eightfold increment in LEE was achieved. In addition, dislocations caused by higher Al content and thicker Al x Ga 1 −x N layer were avoided. This proposed structure could be a very promising candidate for high extraction efficiency LEDs. Index Terms-Alx Ga 1 −x N confining layer, cap layer mode (CLM), embedded photonic crystals (PhCs), finite-difference timedomain (FDTD), LED, light extraction efficiency (LEE).

show abstract

Ga N ∕ In Ga N light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

Cited by 47 publications

References 12 publications

GaN‐based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization

GaN‐based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization

High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals

Improving Light Extraction Efficiency of GaN-Based LEDs by Al$_{\bm x}$Ga$_{{\bf 1}{\bm -}{\bm x}}$N Confining Layer and Embedded Photonic Crystals

Contact Info

Product

Resources

About