Ga₂O₃based multilevel solar-blind photomemory array with logic, arithmetic, and image storage functions

Abstract

Photomemories offer great opportunities for multifunctional integration of optical sensing, data storage, and processing into one single device. So far, however, little attention has been paid to photomemories working in...

Flexible Artificial Optoelectronic Synapse based on Lead‐Free Metal Halide Nanocrystals for Neuromorphic Computing and Color Recognition

“…Performance uniformity and electrical stability in the bending state are crucial for imaging applications of flexible optoelectronic synapse arrays. [ 45 , 46 ] We first verified the uniformity of 100 pixels by making statistics on the current. As summarized in Figure S12 in the Supporting Information, all pixels have similar dark currents (23.86 ± 5.70 pA) and photocurrent (0.64 ± 0.02 nA) value after light illumination of 40 s ( V GS = 0 V, V DS = −10 V, 0.1 mW cm −2 ).…”

Boosting photoprogramming performance of molecular-switch-embedded organic transistors via structural optimization of polymer semiconductors

“…Various semiconductor devices with highly photoprogrammable performances are becoming important research targets as the light fidelity (Li-Fi) technology is drawing increasing attention as a replacement for conventional Wi-Fi. [1][2][3][4][5][6][7] Among them, organic non-volatile photonic memory devices are regarded as strong candidates for Li-Fi application because of their high speed, low power consumption, and low fabrication cost. [8][9][10][11][12][13][14] Embedding photochromic molecular switches such as diarylethenes (DAEs) and azobenzenes into organic field-effect transistors (OFETs) is one of the most efficient ways to realize highly efficient photoprogramming due to the bistable switching of OFET current levels by means of two different external wavelengths.…”

Piezo-phototronic effect regulated broadband photoresponse of a-Ga2O3/ZnO heterojunction

“…12,13 Benefiting from a low preparation temperature and improved light absorption capability, 14,15 amorphous Ga 2 O 3 (a-Ga 2 O 3 ) has been demonstrated as a potential candidate for DUV photodetectors with adaptability to flexible substrates and an extended spectral absorption range. 6,[16][17][18] Recently, broadband photodetectors with a wide spectral photoresponse, as essential components of the modern integrated and miniaturized electronics industry, have received widespread attention for many technological applications, such as in imaging, optical communications, remote sensing, photoelectric memory, environment monitoring and military surveillance. [19][20][21][22] Moreover, the flexible characteristics of these device will expand their potential uses in human-machine interfaces and wearable applications.…”

“…23 It has been reported that crystalline disorder and oxygen vacancies in a-Ga 2 O 3 lead to a relatively narrow bandgap and a broad light absorption range. 16,17 However, further research is needed to tailor and optimize its broadband photoresponse, particularly the broadband photoresponse ranging from the deep ultraviolet to near-infrared (DUV-Vis-NIR) photodetection through the employment of a-Ga 2 O 3 .…”