As a kind of photodetector, position-sensitive-detectors (PSDs) have been widely used in noncontact photoelectric positioning and measurement. However, fabrications and applications of solar-blind PSDs remain yet to be harnessed. Herein, we demonstrate a solar-blind PSD developed from a graphene/Ga2O3 Schottky junction with a 25-nanometer-thick Ga2O3 film, in which the absorption of the nanometer-thick Ga2O3 is enhanced by multibeam interference. The graphene/Ga2O3 junction exhibits a responsivity of 48.5 mA/W and a rise/decay time of 0.8/99.8 μs at zero bias. Moreover, the position of the solar-blind spot can be determined by the output signals of the PSD. Using the device as a sensor of noncontact test systems, we demonstrate its application in measurement of angular, displacement, and light trajectory. In addition, the position-sensitive outputs have been used to demodulate optical signals into electrical signals. The results may prospect the application of solar-blind PSDs in measurement, tracking, communication, and so on.

Photomemories offer great opportunities for multifunctional integration of optical sensing, data storage, and processing into one single device. So far, however, little attention has been paid to photomemories working in...

Solar‐blind detectors play important roles in military and civilian affairs, due to their high signal‐to‐noise ratio and low‐false alarm rate. In recent years, wide‐bandgap semiconductor‐based solar‐blind photodetectors have been studied extensively. However, very little attention has been paid to position detection of solar‐blind light. Herein, a solar‐blind position‐sensitive detector (PSD) is fabricated from β‐Ga2O3/polycrystalline diamond heterojunctions. The solar‐blind PSD shows good solar‐blind response characteristics. In addition, the output signals of the PSD are dependent on the position of the solar‐blind light spot, which can be utilized to realize position detection of solar‐blind signals.

Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that involves precise control of surface preparation, lithography, and deposition techniques. Here the study demonstrates that GaN/Ga2O3 heterojunctions can be fabricated utilizing laser processing to transform the surface of GaN into Ga2O3. The GaN/Ga2O3 heterojunctions exhibit good reproducibility, uniformity, and ability to operate under zero bias, with a responsivity of 110.22 mA W−1, a detection rate of 5.56 × 1011 jones, and an external quantum efficiency of 42.34%. Moreover, an 8 × 8 photodetector array based on GaN/Ga2O3 heterojunction is fabricated via laser writing and is demonstrated to have ultraviolet imaging capabilities. This report presents the pioneering fabrication of a photodetector array using laser writing. The findings offer a versatile and scalable approach for the production of large‐area heterojunction photodetector arrays.