Ga-vacancy induced room temperature ferromagnetism observed in N-irradiated GaN films

Xu, Juping; Li, Qiang; Zhang, Wenshuai; Liu, Jiandang; Du, Honglin; Ye, Bangjiao

doi:10.1016/j.cplett.2014.10.045

Cited by 20 publications

(9 citation statements)

References 31 publications

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“…Comparing the obtained results with experiments, we note that, according to the results, the observed collective ferromagnetism in GaN systems [7][8][9][10][11] can originate from magnetic interaction between V Ga O N defects. And in Ga-rich InGaN alloys, we predict even stronger FM.…”

Section: Discussionsupporting

confidence: 68%

“…III-nitride materials such as GaN and InGaN have found their applications in advanced solid-state lighting technologies [1][2][3] and optoelectronic devices including diodes or solar cells [4][5][6]. Moreover, the ferromagnetism (FM) in GaN or InN without doping by transition metal atoms was recently observed [7][8][9][10][11]. This FM was ascribed to the formation of native defects, such as cation vacancies or their complexes.…”

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confidence: 99%

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Spin Polarization and Magnetic Properties of VGaON and VGaONInGa in GaN: GGA+U Approach

Volnianska

2019

J Supercond Nov Magn

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Electronic structure of a defect center containing the gallium vacancy and substitutional oxygen atom at nitrogen site (V Ga O N) in zinc blende and wurtzite GaN was analyzed within GGA+U approach. The +U term was applied to d(Ga), p(N), p(O), and d(In). Neutral V Ga O N is in the stable high spin state with spin S = 1. The defect structure is strongly dependent on geometry of the defect and the charge state. Two spin structures, which arise due to two different configurations in V Ga O N , with O N either along the caxis or in one of three equivalent tetrahedral positions in wurtzite structure were analyzed. The weak ferromagnetic coupling between centers was found. The strength of magnetic coupling is increased when there is a complex containing V Ga O N with additional substitutional indium atom at the second neighbor to vacancy gallium site (V Ga O N In Ga). Magnetic coupling between V Ga O N In Ga is ferromagnetic due to strong spin polarization of p electrons of the nearest and distant nitrogen atoms. Keywords GaN. In doping. Complex V Ga O N. Magnetic coupling. LDA+U calculations * O. Volnianska

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Section: Discussionsupporting

confidence: 68%

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confidence: 99%

Spin Polarization and Magnetic Properties of VGaON and VGaONInGa in GaN: GGA+U Approach

Volnianska

2019

J Supercond Nov Magn

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“…Positron annihilation is a powerful technique for evaluating vacancy‐type defects in semiconductors . Defects introduced by particle irradiation in GaN have been investigated using this method , and the results show that positrons are a powerful probe for studying vacancies and vacancy‐impurity complexes in GaN. In the present study, we used monoenergetic positron beams to study the annealing behaviors and interaction of vacancy‐type defects in Mg‐implanted GaN.…”

Section: Introductionmentioning

confidence: 99%

Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam

Uedono

Takashima

Edo

et al. 2015

Physica Status Solidi (b)

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Vacancy-type defects in Mg-implanted GaN were probed using a monoenergetic positron beam. Mg ions of multiple energies (15-180 keV) were implanted to provide a 200-nmdeep box profile with Mg concentration of 4 Â 10 19 cm À3 . The major defect species of vacancies introduced by Mgimplantation was a complex between Ga-vacancy (V Ga ) and nitrogen vacancies (V N s). After annealing above 1000 8C, these defects started to agglomerate, and the major defect species became (V Ga ) 2 coupled with V N s. The defect reaction occurred between not only the defects introduced by the implantation but also the defects introduced by an excess Mg-doping. The depth distribution of vacancy-type defects agreed well with that of implanted Mg, and no large change in the distribution was observed up to 13008C annealing. Relationships between photoluminescence bands and vacancy-type defects introduced by Mg-implantation are also discussed.

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“…Positron annihilation is a powerful technique to evaluate vacancy-type defects in semiconductors, 16,17 and defects in group-III nitrides have been successfully investigated using this method. [18][19][20][21][22][23][24] In this study, we used a monoenergetic positron beam to probe native vacancies in Al 0.1 Ga 0.9 N layers grown on Si substrates. We showed that the obtained results provided additional insights to explain the change in the leakage blocking capability of these layers.…”

Section: Introductionmentioning

confidence: 99%

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Uedono

Zhao

Simoen

2016

Journal of Applied Physics

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Articles you may be interested inProbing the effect of point defects on the leakage blocking capability of Al 0.1 Ga 0.9 N/Si structures using a monoenergetic positron beam ) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al 0.1 Ga 0.9 N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (C N s). The charge state of the vacancies was positive because of the electron transfer from the defects to C N -related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by C N -related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and C N -related acceptors. Published by AIP Publishing. [http://dx

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Ga-vacancy induced room temperature ferromagnetism observed in N-irradiated GaN films

Cited by 20 publications

References 31 publications

Spin Polarization and Magnetic Properties of VGaON and VGaONInGa in GaN: GGA+U Approach

Spin Polarization and Magnetic Properties of VGaON and VGaONInGa in GaN: GGA+U Approach

Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

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