GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Thin Strain-Relaxed In<sub>0.45</sub>Ga<sub>0.55</sub>As Barriers for Ultrafast All-Optical Switches

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We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω 1 , ω 2 , and ω 3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω 1 % ω 2 = ω 2 % ω 3 ) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω 1 and ω 2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω 3 (= 2ω 2 % ω 1 ) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses.

Section: Introductionmentioning

confidence: 99%

GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

Lu¹,

Ota²,

Kumagai³

et al. 2017

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“…We have demonstrated optical Kerr gate switches based on a GaAs=AlAs multilayer cavity with InAs quantum dots (QDs) embedded in strain-relaxed barriers. [10][11][12][13][14][15] The strong internal light electric field due to the cavity effects yields drastically enhances of a nonlinear phase shift in the half-wavelength (λ=2) cavity layer containing QDs. Vertical geometry alloptical switches based on the reflectance modulation of conventional InAs QDs placed in a GaAs=AlGaAs multilayer cavity have also been demonstrated by Jin and coworkers.…”

Section: Introductionmentioning

confidence: 99%

Four-wave mixing in GaAs/AlAs triple-coupled cavity with InAs quantum dots

Ogarane

Yasunaga

Nakagawa

et al. 2015

We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure for an ultrafast wavelength conversion device. We found that significant improvement in the wavelength conversion was realized by introducing good nonlinear materials in the cavity layer, and that the precise control of the cavity modes was important to obtain stronger frequency conversion signals. We grew a triple coupled multilayer cavity structure with self-assembled InAs quantum dots (QDs) by molecular beam epitaxy and investigated the frequency separations of the cavity modes in relation to the cavity layer thickness using on the basis of the reflection spectra. Clear four-wave mixing (FWM) signals were demonstrated by time-resolved FWM measurements were performed at room temperature using a femtosecond laser system.

“…We have demonstrated optical Kerr gate switches based on a GaAs/AlAs multilayer cavity with InAs quantum dots (QDs) embedded in strain-relaxed barriers. [10][11][12][13][14][15] The strong internal electric field of the cavity mode markedly enhances nonlinear phase shifts in the half-wavelength (/2) cavity layer containing QDs, which results in a strongly enhanced optical Kerr signal. 16) Vertical geometry all-optical switches based on the reflectance modulation of conventional InAs QDs placed in a GaAs/AlGaAs multilayer cavity have also been demonstrated by Jin and coworkers.…”

Section: Introductionmentioning

confidence: 99%

Four-wave mixing in a GaAs/AlAs triple-coupled multilayer cavity for novel ultrafast wavelength conversion devices

Kitada¹,

Yasunaga²,

Nakagawa³

et al. 2014

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Four-wave mixing (FWM) in a GaAs/AlAs triple-coupled multilayer cavity has been studied for novel planar wavelength conversion devices. Three half-wavelength cavity layers are connected in series using GaAs/AlAs distributed Bragg reflector multilayers to yield three cavity modes with equal frequency separation. Efficient and ultrafast wavelength conversion via nondegenerate FWM can be realized even in the normal incidence configuration because of the enhanced internal electric fields of the three cavity modes. The triple-coupled cavity sample was grown by molecular beam epitaxy and wavelength conversion was successfully demonstrated by measuring the spectrum of time-resolved FWM signals generated by spectrally shaped laser pulses. We found that precise control of the layer thickness is particularly important because the structural asymmetry due to the thickness inhomogeneity produces a nondegenerate FWM signal with low intensity. The temporal response was extremely fast and was almost limited by the photon lifetime (∼1 ps) of each cavity mode.