GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer

Cheah, W.K.; Fan, Wenhui; Yoon, Soon Fatt; Zhang, D.H.; Ng, B. K.; Loke, Wan Khai; Liu, R.; Wee, Andrew Thye Shen

doi:10.1109/lpt.2005.851923

Cited by 18 publications

(12 citation statements)

References 15 publications

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“…Since the peak responsivities of A and B are comparable to that of the Ga 0.88 In 0.12 N 0.037 As 0.963 device (without the AlAs layer), any errors in responsivity R due to internal reflections in A and B appear to be negligible. At 1300 nm, the values of R are 0.18, 0.18, and 0.19 A/W for the A, B, and Ga 0.88 In 0.12 N 0.037 As 0.963 devices, respectively, which are all higher than the 0.097 A/W of the GaInNAsSb p-i-n diode of comparable thickness reported in [3]. At 1550 nm, device A gave ∼0.098 A/W, whereas device B gave ∼0.021 A/W.…”

Section: Device Structure and Experimental Methodsmentioning

confidence: 59%

“…The interest in dilute-nitridebased optoelectronic devices has also grown from the earlier work in long-wavelength lasers on GaAs to a host of potential applications including solar cells, optical modulators, and photodetectors [3]- [5]. Although the growth of high-quality dilute-nitride materials incorporating a sufficient amount of N remains challenging, the obvious advantages offered by the growth of Ga(In)NAs(Sb) with a near lattice match to GaAs, such as cheaper substrates and mature processing technology, have driven continued efforts to improve the growth process [6].…”

Section: Introductionmentioning

confidence: 99%

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GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

Tan

Zhang

Soong

et al. 2011

IEEE Electron Device Lett.

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GaInNAsSb p-i-n photodetectors on GaAs substrates capable of detecting wavelengths up to 1550 nm with a reduced dark current are presented in this letter. Responsivities of 0.18 A/W at 1300 nm and 0.098 A/W at 1550 nm were achieved in devices with a ∼ 0.5-μm-thick GaInNAsSb p-i-n epitaxial layer with 10% In, 4.08% N, and 4.4% Sb. The absorption coefficient (α) spectra show that α is intrinsically higher than that of the indirect-gap Ge layer but ∼2.6 times lower than that reported for a In 0.53 Ga 0.47 As epitaxial layer at 1550 nm. The dark currents of the GaInNAsSb devices are found to be lower than not only those of the GaInNAs devices of a similar energy gap but also the state-of-the-art Ge/Si avalanche photodiodes. The lower dark currents in the GaInNAsSb devices compared with the GaInNAs devices can possibly be attributed to the reduction of defects in the Sb-containing epitaxial layer.

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Section: Device Structure and Experimental Methodsmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

Tan

Zhang

Soong

et al. 2011

IEEE Electron Device Lett.

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“…This intensity change is similar to that reported elsewhere and is consistent with the hypothesis that trap sites are formed which are associated with nitrogen defects and can be partially removed through annealing. [6,11] While annealing has clear benefits towards the observation of PL signals the question remains how this affects the electrical characteristics of detectors made from the material. Using thick lattice-matched InGaNAs material with approximately 10% indium and 3% nitrogen, room temperature Hall measurements were performed to examine the carrier concentration and mobility of as-grown and annealed layers.…”

Section: Discussionmentioning

confidence: 99%

Growth and Characterization of InGaNAs Quaternary Alloys for the Fabrication of Long Wavelength MSM Photodetectors on GaAs Substrates

et al. 2005

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In this paper, the optical and electrical properties of both as-grown and annealed thick In x Ga 1-x N y As 1-y layers grown by metal organic chemical vapour deposition (MOCVD) are presented. Through careful control of the trimetylyindium (TMIn), dimetylyhydrazine (DMHy), trimrthylgallium (TMGa) and arsine (AsH 3 ) precursors, lattice matching conditions were achieved for epitaxial layers containing up to 3% nitrogen (0≤y≤0.03) and 11% indium (0≤x≤0.11) with bandgap wavelengths to 1.3 µm. Nomarski optical microscopy and double crystal x-ray diffraction (XRD) measurements are used to investigate surface morphology, material quality and lattice-matched conditions. There is little or no 10K photoluminescence from the as-grown layers; alloy activation through rapid thermal annealing must be performed to obtain observable photoluminescence peaks. Annealing is also performed to reduce the resistivity of the as-grown layers. Once annealed the undoped layers exhibited ptype carrier concentrations of 5.5x10 17 cm -3 and mobilities of 50 cm 2 /Vs. The DC and frequency response performance characteristics of metal-semiconductor-metal (MSM) photodetectors fabricated on both as-grown and annealed InGaNAs materials are examined and compared to similar structures fabricated using GaAs and InGaAs/InP epitaxial materials.

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“…GaAsSbN has one group-III element and thus avoids the chemical exchange between Group III-N bonds resulting from thermal treatments [1]. These properties may bring about the applications to long wavelength detectors and sub-cells for tandem solar cells [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

GaAsSbN/GaAs long wavelength PIN detectors

Chen

Lin

et al. 2008

2008 20th International Conference on Indium Phosphide and Related Materials

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We report the fabrication of dilute nitride GaAsSbN/GaAs PIN detector with a cut-off wavelength over 1.5 fJm. Effect of thermal annealing on the device characteristics is also presented. We found that the thermal treatment increases the acceptor concentration of the GaAsSbN epilayer. The increment leads to the change of conduction type in undoped and Si-doped GaAsSbN and results in low quantum efficiency for the homojunction p-i-n GaAsSbN detector. A heterojunction n-GaAs/i-GaAsSbN/p-GaAsSbN detector was designed to avoid the problem of type conversion. The quantum efficiency of the heteroj unction device can reach to 0.13 at 1.1 Jlm.

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GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer

Cited by 18 publications

References 15 publications

GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

Growth and Characterization of InGaNAs Quaternary Alloys for the Fabrication of Long Wavelength MSM Photodetectors on GaAs Substrates

GaAsSbN/GaAs long wavelength PIN detectors

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