GaAs HBT ESD Diode Layout and its Relationship to Human Body Model Rating

Teeter, D.A.; Muhonen, Kathy; Widay, David; Fresina, M.T.

doi:10.1109/bipol.2006.311139

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…Ruggedness is especially critical to Class-C power amplifiers, for which electric breakdown is always a concern since Class-C power amplifiers were first made of vacuum tubes. To improve the ruggedness of HBT power amplifiers, several approaches have been proposed including adding an emitter ballast resistor [2], or electrostatic discharge protection circuit to the amplifier input [3], as well as using a collector voltage sensing circuit to adjust the input signal [4], the collector bias voltage [5], [6] or current [7]. However, these approaches tend to degrade the amplifier gain and output power, add circuit complexity and power consumption, and are slow to respond in the case of digital feedback.…”

Section: Introductionmentioning

confidence: 99%

Rugged HBT Class-C power amplifiers with base-emitter clamping

Luo

Haldar

Hwang

2011

2011 IEEE MTT-S International Microwave Symposium

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-The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3:1 instead of 2:1 mismatch in CW operation, and 2.5:1 instead of 1.5:1 mismatch in pulse operation. In contrast to other approaches with emitter ballast, active feedback, or electrostatic discharge protection circuits, the present approach is simple to implement and has negligible impact on overall amplifier output power, gain or efficiency.

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