GaAs layer on c-plane sapphire for light emitting sources

Kumar, Rahul; Saha, Samir K.; Kuchuk, Andrian; Maidaniuk, Yurii; Oliveira, Fernando M. de; Yan, Qiangu; Benamara, Mourad; Mazur, Yuriy I.; Yu, Shui-Qing; Salamo, Gregory J.

doi:10.1016/j.apsusc.2020.148554

Cited by 9 publications

(6 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…40 Notably, a defect-related red shift of the absorption edge was presented. Recent studies 41,42 show the crucial effect of the nucleation layer on the structure and morphology of lattice-mismatched GaAs on sapphire epilayers grown by MBE.…”

Section: ■ Introductionmentioning

confidence: 83%

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

Fedorov

Koval²,

Ryabov

et al. 2022

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Gallium phosphide is a low-loss, high-refractive-index semiconductor considered as a promising material for active and passive components in modern nanophotonics. In this work, we show that nanoscale epitaxial layers of GaP with high optical quality can be formed directly on the transparent sapphire wafers despite the symmetry and lattice constant mismatch. This is achieved using a two-step growth technique through the framework of a domain matching epitaxy mechanism. Direct molecular beam epitaxial growth enables the control of material properties and layer thickness with subnanometer precision and allows us to obtain (111)-oriented epitaxial layers of GaP on high-optical-contrast sapphire wafers without the use of postgrowth layer transfer techniques. The influence of growth conditions on the structural quality of GaP-on-sapphire is revealed using Raman spectroscopy and X-ray diffraction reciprocal space mapping. We study the impact of the growth procedure employing a low-temperature seeding layer on the GaP layer morphology and structural quality. Spectroscopic ellipsometry measurements confirm that both the refractive index and the absorption coefficient of the epitaxial GaP layers are close to those of bulk GaP crystals. We also discuss how the GaP layer morphology and structural quality affect its optical density, drawing special attention to the mechanisms of optical losses. Finally, by nanostructuring the grown layer, we fabricate single GaP nanoantennas and confirm their highly resonant optical response in the visible spectral range, thus confirming the feasibility of the reported technology for various nanophotonic applications.

show abstract

Section: ■ Introductionmentioning

confidence: 83%

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

Fedorov

Koval²,

Ryabov

et al. 2022

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…The preparation for the sapphire substrate before the growth is discussed in our previous reports. 16,17,19 Consequently, all sapphire substrates used in this work possessed an atomic step-terrace surface, consisting of one monolayer with 0.2-0.3 nm high steps and non-uniform terraces having widths of 200 nm to 300 nm. Prepared substrates are transferred to either (a) the group IV chamber for growth of Ge or (b) to the group III-V arsenic chamber for growth of an AlAs nucleation layer, before transfer to the IV chamber for growth of Ge.…”

Section: Methodsmentioning

confidence: 99%

“…The choice to investigate the sapphire platform is based on several advantages over current silicon technology, such as, (1) significantly greater immunity to the defects of space radiation, 16 (2) high index contrast for efficient waveguides, 17 (3) a nearly perfect thermal expansion match to group IV and III–V semiconductors for durability, 18 and (4) the flexibility to support the monolithic fabrication of both laser and photonic integrated circuit on one platform, allowing higher function at reduced cost. 19 However, the approach must deal with a significant mismatch in lattice type and lattice constant.…”

Section: Introductionmentioning

confidence: 99%

Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…Moreover, the exceptional matching between the coefficient of thermal expansion of sapphire and III–V semiconductors is a very important advantage over other substrates, such as silicon . The electron mobility is relatively high in GaAs, so in the same platform, electronics and optical devices would be integrated if high-quality GaAs can be grown on a sapphire substrate. ,− …”

Section: Introductionmentioning

confidence: 99%

“…For example, in our earlier study, we have shown the effectiveness of two-step growth for GaAs/c-plane sapphire and the effect of variation in low-temperature layer thickness on material quality. 6 The best sample of our last study, sample ID S1, has been taken as the baseline. Further, in this present work, we achieve the epitaxial growth of GaAs on a sapphire substrate by employing a combination of two-step growth and multiple annealing.…”

Section: Introductionmentioning

confidence: 99%

Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Kumar,

Saha,

Kuchuk

et al. 2023

Crystal Growth & Design

Self Cite

View full text Add to dashboard Cite

High-quality GaAs on the c-plane sapphire has been achieved by employing a two-step growth technique, multiple annealing, and an AlAs nucleation layer using molecular beam epitaxy (MBE). The effect of growth parameters, namely, growth temperature, As2 flux, and low-temperature layer growth temperature (LTLGT) in two-step growth have been investigated. In all of the grown samples, the epitaxial orientation of the film is GaAs (111)A. Unlike the homoepitaxial GaAs (111)A MBE growth, where increasing the As2 flux improves the film quality, here the lowest As2 flux resulted in the best film quality. Very low LTLGT resulted in highly twinned material and film surface with many pits. Growth temperature also plays an important role, as seen by the exceptional structural and optical properties of samples grown at 650 °C, but at the cost of the rough film surface. We have observed low-temperature photoluminescence (PL) for all of the samples. However, for the first time, to the best of our knowledge, room-temperature PL (RT-PL) has been demonstrated from a heteroepitaxial GaAs (111)A film. This result is important because RT-PL from the epitaxial GaAs/c-plane sapphire will lead to the fabrication of GaAs laser on sapphire, which is an important functionality to realize photonic circuits on the sapphire platform.

show abstract

GaAs layer on c-plane sapphire for light emitting sources

Cited by 9 publications

References 33 publications

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)

Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Contact Info

Product

Resources

About