GaAs to InP wafer fusion

Ram, Rajeev J.; Dudley, J.J.; Bowers, John E.; Yang, Ligang; Carey, K. W.; Rosner, S. J.; Nauka, K.

doi:10.1063/1.359884

Cited by 66 publications

(28 citation statements)

References 37 publications

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“…and for partial k calculated by using approximation [15] g=ic1(f-f) Temperature dependence of the cavity resonance, Eres, and the energy gap, Eg, are given by [9,16] Er a845.5x15T 4.9O6x1O4T2 (4) EgO85…”

Section: Model Calculationsmentioning

confidence: 99%

GaInAsP/InP vertical-cavity surface-emitting laser for 1.5-μm operation

Sceats

Ramoo

Masum

et al. 1999

Physics and Simulation of Optoelectronic Devices VII

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Long-wavelength vertical cavity surface emitting lasers (VCSELs) operating in the 1 .3tm to 1 .5im wavelength range are ideal light sources for optical fibre communication applications. However, a number of problems have hindered progress in the development of cost-effective long wavelength VCSELs. These are (a) inthnsically high non-radiative losses, (b) difficulty in fabricating highly reflecting mirrors, lattice-matched to InP, and (c) the disparity between the predicted and observed temperature dependence of the operation of the devices. In this report we present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP VCSEL fabricated at BT laboratories. The device is tailored to emit at around 1 .5 im at room temperature. The structure has a 45 period n-doped GaInAsPIInP bottom Distributed Bragg Reflector (DBR), and a 4 period Si/A1203 dielectric top reflector. Spectral electroluminescence (EL) from a 16 im diameter window is measured in the pulsed injection mode. Device parameters are recorded in the temperature range between 90 K and 240K. Threshold current exhibits an approximate parabolic temperature dependence with a broad minimum of J = 13.2 kA cm2, at temperatures between 170K and 195K. Temperature dependence of the threshold current is compared with the theoretical calculations which consider radiative transitions with and without k-selection. Best agreement with the experimental results is obtained when a partial k-selection model, with an energy broadening of about 4.4 meV, is used in the calculations.

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Section: Model Calculationsmentioning

confidence: 99%

GaInAsP/InP vertical-cavity surface-emitting laser for 1.5-μm operation

Sceats

Ramoo

Masum

et al. 1999

Physics and Simulation of Optoelectronic Devices VII

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“…Whereas mechanical constrains are limited, wafer bonding junctions exhibit electrical and optical behavior close to those of epitaxially grown interfaces [4]. Therefore light emitting and absorbing devices can be designed using the combination of different III-V materials such as GaAs and InP with compatible but different properties.…”

Section: Introductionmentioning

confidence: 99%

Electrical modeling of the GaAs/InP wafer bonded heterojunction

Blot

Scheiblin

Moriceau

et al. 2014

Phys. Status Solidi C

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The electrical behavior of wafer bonded heterojunctions is usually modeled with the assumption of a pure thermionic conduction at the interface. In this paper, we study the case of highly doped bonded wafers using a Technology Computer Aided Designed (TCAD) modeling approach. Several plausible options of interface including fixed surface charges, interface states densities or a defective interface layer, are discussed and compared with current‐voltage measurements. Considering both thermionic and tunnel transport through the interface, we show how the ratio of the competing transport mechanisms depends on the shape of the interfacial energy barrier. Finally, the simulation accurately predicts the effect of the operating temperature on current‐voltage characteristics, thanks to a process‐compliant description of the direct bonded heterojunction. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…While both hydrophilic and hydrophobic bonding are routinely utilized in Si-based wafer bonding, the bonding process for III-V wafers usually involves native oxide removal in hydrogen ambient, temperatures above 500°C and high mechanical compressive forces [9], [10]. This procedure has been utilized to integrate InP-based gain regions with high quality GaAs-based distributed Bragg reflectors (DBRs) in vertical cavity surface emitting lasers (VCSELs) [11], [12] and semiconductor disk laser (SDLs) [13], [14].…”

Section: Introductionmentioning

confidence: 99%

Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding

Rantamäki

Lyytikäinen

Heikkinen

et al. 2013

IEEE Photon. Technol. Lett.

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We present wafer bonding techniques applied for the first time in integrating GaAs-based distributed Bragg reflectors (DBRs) with InP-based active regions in optically pumped semiconductor disk lasers. The bonding procedures are performed at a modest temperature of 200°C and enable multiwatt output powers from 1.3 µm semiconductor disk lasers. These technologies are critical for vertical-cavity lasers emitting in the range 1.3-1.6 µm since monolithically grown lattice-matched InP structures suffer from DBRs with low refractive index contrast and poor thermal conductivity when compared with GaAs-based DBRs.Index Terms-Low temperature wafer bonding, molecular beam epitaxy (MBE), semiconductor disk laser (SDL).

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GaAs to InP wafer fusion

Cited by 66 publications

References 37 publications

GaInAsP/InP vertical-cavity surface-emitting laser for 1.5-μm operation

GaInAsP/InP vertical-cavity surface-emitting laser for 1.5-μm operation

Electrical modeling of the GaAs/InP wafer bonded heterojunction

Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding

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