This paper presents an analysis of the various properties of the fused interface between GaAs and InP. Interface dislocations are characterized by transmission electron microscopy. Bipolar electrical properties are studied by electron beam induced current measurements and by electrical measurements of fused diode and laser structures. Absorptive optical losses at the interface are estimated from measurements on fused Fabry–Perot resonators and optical scattering losses from interface roughness are estimated by atomic force microscopy. Finally a preliminary mechanical analysis of fracture patterns of fused mesas is presented. The results from our analysis are used to develop guidelines for the fabrication of fused optoelectronic devices.

We demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The technique of wafer fusion allows for integration of GaAs/AlAs mirrors with InP double heterostructures without degradation of device performance, despite a 3.7% lattice mismatch between the wafers. The wafer fused VCLs have the lowest threshold current (9 mA) and lowest threshold current density (9.5 kA/cm2) and the highest characteristic temperature (T0=67 K) reported to date of any room-temperature long wavelength VCL.

We demonstrate a novel long-wavelength vertical-cavity laser structure employing two AlAs/GaAs mirrors and a strain-compensated InGaAsP quantum-well active region. The lasers have been fabricated by wafer fusion and have the lowest room-temperature pulsed threshold current density of 3 kA/ cm2 at 1.52 μm. Eight laser sizes ranging from 9 to 60 μm were fabricated with threshold currents as low as 12 mA. Single transverse mode operation was observed on the 9 μm device, while other devices lased multimode. The maximum pulsed output power was 7 mW.

Abstract— High‐power red, green, and blue laser light sources made from vertically emitting arrays of intracavity doubled IR lasers is reported. The emitted infrared light from a monolithic array of large‐aperture vertical cavity lasers is converted into visible light using a PPLN doubling crystal in an external cavity. A volume Bragg grating provides simultaneous feedback for all emitters in the array and sets the laser wavelength. Increased diffraction losses for higher‐order modes result in quasi‐Gaussian beams with excellent conversion efficiency. Green 532‐nm lasers with more than 5.8‐W visible power have been demonstrated at a base temperature of 40°C. Blue 465‐nm lasers with 4.4‐W power at 40°C are unmatched in performance and wavelength when compared to competing GaN‐based edge emitters. Typical wall‐plug efficiencies are higher than 8%. We have measured single‐emitter operating lifetimes to be more than 28,000 hours. Red lasers based on highly strained InGaAs achieve record laser powers of 2.0W at 618 nm in the same form factor as the green and blue lasers. Red single‐emitter lifetimes of more than 10,000 hours have been attained. The technology described in this paper delivers on a full suite of cost efficient and reliable red, green, and blue lasers that meet the demands of the display markets.

We report lasing at temperatures as high as 144 °C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at room temperature to 81 K at temperatures above 80 °C as the gain peak moves into resonance with the longer wavelength cavity mode.