Low threshold, wafer fused long wavelength vertical cavity lasers

Abstract

We demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The technique of wafer fusion allows for integration of GaAs/AlAs mirrors with InP double heterostructures without degradation of device performance, despite a 3.7% lattice mismatch between the wafers. The wafer fused VCLs have the lowest threshold current (9 mA) and lowest threshold current density (9.5 kA/cm2) and the highest characteristic temperature (T0=67 K) reported to date of any room-temperature long wavelength VCL.

Temperature-dependent optical properties of single quantum well with high nitrogen content for application grown by molecular beam epitaxy

“…In contrast, InP-based devices can easily operate within the desired wavelength window, but they suffer from poor thermal stability (lowering efficiency) and low refractive index contrast (hindering DBR fabrication) [3]. Therefore, many layers are required to produce highreflectivity InP-based DBRs, presenting large growth challenges as well as introducing high series resistance, which retards device dynamics [4,5]. The quaternary alloy InGaNAs, offering several advantages over conventional narrow-gap materials, has been demonstrated to be a promising material to solve these problems [6][7][8].…”

Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

“…In a semiconductor system that lacks sufficiently high index contrast alloys, a solution is to grow nonlattice-matched DBR's, and then wafer bond them to the optical cavity. For example, DBR mirrors consisting of GaAs-AlAs layers have been grown separately and then wafer bonded to phosphide-based alloys for operation at 1.3 and 1.55 m [12].…”

Electrical modeling of the GaAs/InP wafer bonded heterojunction

“…Therefore light emitting and absorbing devices can be designed using the combination of different III-V materials such as GaAs and InP with compatible but different properties. For instance, double-bonded vertical cavity laser structure (VCLs), where a quantum-well active region is sandwiched between a n-type and a p-type epitaxial mirror were designed [5,6]. In optoelectronics integrated circuits (OEICs), the direct wafer bonding technique is used to increase the performances of laser devices by localizing a high density of dislocations at the interface [7].…”